Investigation on the Mechanism of Triggering Efficiency of High-Power Avalanche GaAs Photoconductive Semiconductor Switch

Sun, Yue; Hu, Long; Dang, Xin; Zhu, Li; Yang, Xiaojun; Huang, Jia; Li, Xin

doi:10.1109/led.2021.3114600

Cited by 19 publications

(2 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is worth noting that the above experimental results can also match the existing reports about the effect of the typical spots on the on-state performances of GaAs PCSS. According to our results, the quasi-linear mode reported in references [19] and [24] can be well demonstrated. In this mode, compared to a line-shaped spot across the electrodes, a spot covering the whole switching area is adopted to obtain the higher photocurrent and suppress the current filament appearing on the nonlinear switching, contributing to the higher photoelectric conversion efficiency and device lifetime.…”

Section: On-state Performances Under the Typical Spotssupporting

confidence: 81%

Effects of spot size on the operation mode of GaAs photoconductive semiconductor switch employing extrinsic photoconductivity

WEI 韦,

LI 李,

CHEN 陈

et al. 2024

Plasma Sci. Technol.

View full text Add to dashboard Cite

To guide the illuminating design to improve the on-state performances of gallium arsenide (GaAs) photoconductive semiconductor switch (PCSS), the effect of spot size on the operation mode of GaAs PCSS based on a semi-insulating wafer with a thickness of 1 mm, triggered by a 1064-nm extrinsic laser beam with the rectangular spot, has been investigated experimentally. It is found that the variation of the spot size in length and width can act on the different parts of the output waveform integrating the characteristics of the linear and nonlinear modes, and then significantly boosts the PCSS toward different operation modes. On this basis, a two-channel model containing the active and passive parts is introduced to interpret the relevant influencing mechanisms. Results indicate that the increased spot length can peak the amplitude of static domains in the active part to enhance the development of the nonlinear switching, while the extended spot width can change the distribution of photogenerated carriers on both parts to facilitate the linear switching and weaken the nonlinear switching, which have been proved by comparing the domain evolutions under different spot sizes.

show abstract

Section: On-state Performances Under the Typical Spotssupporting

confidence: 81%

Effects of spot size on the operation mode of GaAs photoconductive semiconductor switch employing extrinsic photoconductivity

WEI 韦,

LI 李,

CHEN 陈

et al. 2024

Plasma Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…The most attractive feature of GaAs PCSSs is the process of photoexcited carrier multiplication by impact ionization after the removal of external optical excitation, which results in a reduction of the required optical excitation energy. This avalanche operation is known as the high gain (HG) or nonlinear mode, even if optical energy on the scale of microjoules (μJ) or nanojoules (nJ) is employed [11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Photoexcited carrier dynamics in a GaAs photoconductive switch under nJ excitation

Xu¹,

Wang²,

Li³

et al. 2022

Plasma Sci. Technol.

View full text Add to dashboard Cite

The bunching transport of photoexcited carriers in an GaAs photoconductive semiconductor switch (PCSS) with interdigitated electrodes is investigated under the femtosecond laser excitation. The continuous outputs featured with high-gain (HG) characteristic are obtained at single-shot and 1-kHz by varying the optical excitation energy. An ensemble three-valley Monte Carlo simulation is utilized to investigate the transient characteristics and the dynamic process of photoexcited carriers. It demonstrates that the presence of plasma channel can be attributed to the bunching of high-density electron-hole pairs, which transports in the form of the high-density filamentary current. Results provide the pictures of the evolution of photoexcited carriers during the transient switching. The photoinduced heat effect is analyzed that reveals the relative failure mechanism at optical excitation at repetition rates.

show abstract

Influence of optical grating on the triggering efficiency of VCSI silicon carbide photoconductive semiconductor switch

Hong,

Zheng,

Sun

et al. 2024

Optics Communications

View full text Add to dashboard Cite

Investigation on the Mechanism of Triggering Efficiency of High-Power Avalanche GaAs Photoconductive Semiconductor Switch

Cited by 19 publications

References 16 publications

Effects of spot size on the operation mode of GaAs photoconductive semiconductor switch employing extrinsic photoconductivity

Effects of spot size on the operation mode of GaAs photoconductive semiconductor switch employing extrinsic photoconductivity

Photoexcited carrier dynamics in a GaAs photoconductive switch under nJ excitation

Influence of optical grating on the triggering efficiency of VCSI silicon carbide photoconductive semiconductor switch

Contact Info

Product

Resources

About