2014
DOI: 10.12693/aphyspola.125.1033
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Investigation on the Mechanisms of Nitrogen Shallow Implantation Influence on Trap Properties of SiO2/n-Type 4H-SiC Interface

Abstract: Silicon carbide (SiC) is the only wide-bandgap semiconductor capable of forming native dielectric layer of SiO2 by thermal oxidation. This unique property of SiC combined with its high thermal conductivity and high critical eld makes this semiconductor material suitable for high power electronic devices. Unfortunately, the state-of-the art technology does not use the full benets of the material, especially in the case of MOSFET transistors. This is caused by insucient electrical parameters of SiO2/SiC interfac… Show more

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