Investigation on the structural and magnetic properties of Co+ implanted rutile TiO2

Cheng, Fengfeng; Ding, B.Z.; Pan, Feng; Yao, Shuo; Potzger, К.; Zhou, Shengqiang

doi:10.1016/j.nimb.2011.11.014

Nuclear Instruments and Methods in Physics Research Section B:

2012

DOI: 10.1016/j.nimb.2011.11.014

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Investigation on the structural and magnetic properties of Co+ implanted rutile TiO2

Fengfeng Cheng

B.Z. Ding

Feng Pan

et al.

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References 43 publications

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“…the same depth. [14] It is usually employed to evaluate the crystalline quality of the epitaxial layer. For amorphous samples, 𝜒 min amounts to 100%, while for a perfect crystal, it could be 1-2%.…”

mentioning

confidence: 99%

Dislocation and Elastic Strain in an InN Film Characterized by Synchrotron Radiation X-Ray Diffraction and Rutherford Backscattering/Channeling

Cheng

Wang

et al. 2012

Chinese Phys. Lett.

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Dislocation information and strain-related tetragonal distortion as well as crystalline qualities of a 2-µm-thick InN film grown by molecular beam epitaxy (MBE) are characterized by Rutherford backscattering/channeling (RBS/C) and synchrotron radiation x-ray diffraction (SR-XRD). The minimum yield 𝜒min=2.5% deduced from the RBS/C results indicates a fairly good crystalline quality. From the SR-XRD results, we obtain the values of the screw and edge densities to be 𝜌screw = 7.0027 × 10 9 and 𝜌 edge = 8.6115 × 10 9 cm −2 , respectively. The tetragonal distortion of the sample is found to be −0.27% by angular scans, which is close to the −0.28% derived by SR-XRD. The value of |𝑒 ⊥ /𝑒 ‖ | = 0.6742 implies that the InN layer is much stiffer along the 𝑎 axis than that along the 𝑐 axis, where 𝑒 ‖ is the parallel elastic strain, and 𝑒 ⊥ is the perpendicular elastic strain. Photoluminescence results reveal a main peak of 0.653 eV with the linewidth of 60 meV, additional shoulder band could be due to impurities and related defects.

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confidence: 99%

Dislocation and Elastic Strain in an InN Film Characterized by Synchrotron Radiation X-Ray Diffraction and Rutherford Backscattering/Channeling

Cheng

Wang

et al. 2012

Chinese Phys. Lett.

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Increase of Fe solubility in ZnO induced by the grain boundary adsorption

et al. 2014

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Ion implantation induced blistering of rutile single crystals

Xiang

Yang

Guan

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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Investigation on the structural and magnetic properties of Co+ implanted rutile TiO2

Cited by 5 publications

References 43 publications

Dislocation and Elastic Strain in an InN Film Characterized by Synchrotron Radiation X-Ray Diffraction and Rutherford Backscattering/Channeling

Dislocation and Elastic Strain in an InN Film Characterized by Synchrotron Radiation X-Ray Diffraction and Rutherford Backscattering/Channeling

Increase of Fe solubility in ZnO induced by the grain boundary adsorption

Ion implantation induced blistering of rutile single crystals

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