Investigation on the Variation of Sheet Resistance of RF Deposited Nichrome Thin Films with Deposition Parameters

Study of Current Collapse Behaviors of Dual-Gate AlGaN/GaN HEMTs on Si

“…On the other hand, a longer stress period allows depleted carriers to recover in the channel so that current collapse is less obvious. Among various methods to suppress current collapse, such as gate field plates [8], surface passivation [9], [17], dual-gate metal stacks [11]- [13], and HD-GIT [10], [20] as described in the Introduction Section, our results of demonstrating a normalized R ON of 1.87 (by applying V G_Aux of 0 V on G L (see Figure 5) at the stress condition V D _ OFF of 100 V and V G _ OFF of -10 V) are superior to most of previous works by taking the stress voltage and pulse period into consideration. Our approach avoids material regrowth, thus reducing the cost and improving the production yield.…”

“…One of the gates is used to drive the device and the other acts as an auxiliary electrode to provide additional electrons in the channel so that current collapse is suppressed at the moment device switched-on. Literature survey suggests that two different gate metals connected together [11]- [13] or separated from each other [14], [15] between source and drain electrodes can change the device electrical properties, such as drain current levels and threshold voltage [11]- [13], and improvement of current collapse due to the re-distribution of the electric field in the channel. For example, in [12], a HEMT with two metal gates connected together demonstrated current collapse of around 14.4 % from the drain lag experiment at the quiescent drain voltage of 30 V and gate voltage of -7 V, as compared with current collapse of around 24.8 % for a single metal gate device.…”

“…For example, in [12], a HEMT with two metal gates connected together demonstrated current collapse of around 14.4 % from the drain lag experiment at the quiescent drain voltage of 30 V and gate voltage of -7 V, as compared with current collapse of around 24.8 % for a single metal gate device. In addition, the gate lag, drain lag and current collapse (with both gate and drain pulsed voltage stresses) were characterized on the dual-gate HEMT [13], demonstrating various degrees of improvement over the single gate device. The above reports, however, did not apply a bias voltage to the additional gate, mainly because of the concern of complicating the circuitry.…”

Fabrication and characterization of thin film Ni–Cr resistors on MMICs

“…Ni-Cr resistors offer specific points of interest for applications with extraordinary demand for high stability as well as low TCR-like chosen circuits for measuring hardware, information handling, media transmission, etc [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. In GaAs monolithic microwave integrated circuits (MMICs), thin film metal resistors are promptly superseding semiconductor resistors where the resistive medium is a mesa etched or an ion implanted GaAs active layer.…”