Investigation on ZnTe/CdxZn1-xTe heterostructure for photodetector applications

Moger, Sahana Nagappa; Mahesha, M.G.

doi:10.1016/j.sna.2020.112294

Cited by 22 publications

(4 citation statements)

References 37 publications

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“…The maximum R and D * values are observed at a wavelength of 720 nm and equal to 0.25 A W −1 and 6.5 × 10 11 Jones, respectively. The obtained R and D * are comparable to that of the majority reported conventional heterojunction photodiodes based on the CdZnTe photoactive layer [11,43,44].…”

Section: Semiconductors (See Details In Table S1 In Supporting Inform...supporting

confidence: 76%

“…The main photoelectric parameters of the graphite/CdZnTe photodiodes are summarized in table 1. These parameters are at the level of the best analogs based on compound semiconductors [11,43,44,[47][48][49][50]. Given that the proposed photodiodes comprise only radiation-resistant materials (Graphite and CdZnTe), they are promising for use in space or other areas with high level of ionizing radiation.…”

Section: Discussionmentioning

confidence: 99%

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A self-powered UV–vis–NIR graphite/CdZnTe Schottky junction photodiode

Mostovyi

Kuryshchuk

Asanov

et al. 2023

Semicond. Sci. Technol.

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We proposed a self-powered UV-vis-NIR Schottky junction photodiode based on a unique combination of radiation-hard functional materials: thin-film semi-metal Graphite and CdZnTe single-crystal compound semiconductor. The Graphite/CdZnTe Schottky junction photodiodes exhibit a maximum responsivity of 0.25 A W−1 and detectivity of 6.5 × 1011 Jones, close to the best heterojunction photodiodes based on CdZnTe solid solution. The devices are also characterized by short rise/fall times (1.2/7.2 µs) and a wide linear dynamic range (77 dB). The proposed photodiodes are promising for applications in space and terrestrial areas with high levels of ionizing radiation.

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Section: Semiconductors (See Details In Table S1 In Supporting Inform...supporting

confidence: 76%

Section: Discussionmentioning

confidence: 99%

A self-powered UV–vis–NIR graphite/CdZnTe Schottky junction photodiode

Mostovyi

Kuryshchuk

Asanov

et al. 2023

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Cadmium zinc telluride (CdZnTe, CZT) has a wide and adjustable band gap (1.45-2.26), high average atomic number, high resistivity and facile fabrication process, which make it as a promising material in the applications of particle radiation detectors, health caring diagnosis and photodetectors [1][2][3]. Ultraviolet (UV) photodetectors have garnered significant interest due to their widespread applications in industrial, environmental, and biological fields [4][5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

“…Ultraviolet (UV) photodetectors have garnered significant interest due to their widespread applications in industrial, environmental, and biological fields [4][5][6][7][8][9][10]. Particularly, the CZT-based detectors have recently attracted increasing attention for UV photodetection due to its high quantum efficiency, high chemical stability, high mobility-lifetime product and simple growth process [2,3,[11][12][13]. Furthermore, the performance of a MSM CZT-based photodetector depends not only on its film quality but also on the interface condition between the film and the electrode [14][15][16].…”

Section: Introductionmentioning

confidence: 99%