Investigations of a New Nanostructured Si-Material by Spectral Response and Electron Paramagnetic Resonance

Abstract

Electron spin resonance (or electron paramagnetic resonance) was applied to analyze multi‐interface solar cells with an active amorphized substructure inserted in the emitter. The nanostructure was realized by P ion implantation followed by an adequate thermal treatment to yield very sharp a‐Si/c‐Si heterointerfaces. The authors have investigated especially the substructure and the transition zones between the two Si phases, which is particularly interesting because of the stress induced by the density difference of the two Si phases.