Investigations of Ar ion irradiation effects on nanocrystalline SiC thin films

Crăciun, V.; Crǎciun, D.; Socol, G.; Behdad, S.; Boesl, Benjamin; Himcinschi, Cameliu; Makino, Hisao; Socol, Marcela; Siméone, David

doi:10.1016/j.apsusc.2015.12.130

Cited by 3 publications

(3 citation statements)

References 31 publications

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“…A nanocrystalline structure (but with different phases) was recently reported by Galvão et al [ 19 ] for SiC films deposited by HiPIMS at ambient temperature. The XRD results reported in this paper are more consistent with those reported by Craciun [ 30 ] and Keffous [ 31 ]. The peak positioned at 33.0° corresponds to the hexagonal phase 6H-SiC (006) and cubic phase 3C-SiC (111) [ 30 ], while the peak from 61.7° is assigned to the rhombohedral SiC (320) phase [ 31 ].…”

Section: Resultssupporting

confidence: 92%

“…The XRD results reported in this paper are more consistent with those reported by Craciun [ 30 ] and Keffous [ 31 ]. The peak positioned at 33.0° corresponds to the hexagonal phase 6H-SiC (006) and cubic phase 3C-SiC (111) [ 30 ], while the peak from 61.7° is assigned to the rhombohedral SiC (320) phase [ 31 ]. As the gas pressure increases, the films’ structure changes from a hexagonal-preferential orientation to a rhombohedral-preferential orientation.…”

Section: Resultssupporting

confidence: 92%

“…By decreasing the gas pressure, the intensities of C, SiC, and c-Si bands increase, highlighting the enhancement of the density of bonding states and the improvement of short-range order. The Raman spectra of coatings deposited at 0.5, 0.65 and 0.8 Pa look the same as those reported by Craciun et al [ 30 ] for near stoichiometric and nanocrystalline SiC layers deposited by pulsed laser deposition at a nominal substrate temperature of 1000 °C.…”

Section: Resultssupporting

confidence: 80%

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Room Temperature Deposition of Nanocrystalline SiC Thin Films by DCMS/HiPIMS Co-Sputtering Technique

Tiron

Ursu²,

Cristea

et al. 2022

Nanomaterials

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Due to an attractive combination of chemical and physical properties, silicon carbide (SiC) thin films are excellent candidates for coatings to be used in harsh environment applications or as protective coatings in heat exchanger applications. This work reports the deposition of near-stoichiometric and nanocrystalline SiC thin films, at room temperature, on silicon (100) substrates using a DCMS/HiPIMS co-sputtering technique (DCMS—direct current magnetron sputtering; HiPIMS—high-power impulse magnetron sputtering). Their structural and mechanical properties were analyzed as a function of the process gas pressure. The correlation between the films’ microstructure and their mechanical properties was thoroughly investigated. The microstructure and morphology of these films were examined by appropriate microscopic and spectroscopic methods: atomic force microscopy (AFM), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), and Raman spectroscopy, while their mechanical and tribological properties were evaluated by instrumented indentation and micro-scratch techniques. The lowest value of the working gas pressure resulted in SiC films of high crystallinity, as well as in an improvement in their mechanical performances. Both hardness (H) and Young’s modulus (E) values were observed to be significantly influenced by the sputtering gas pressure. Decreasing the gas pressure from 2.0 to 0.5 Pa led to an increase in H and E values from 8.2 to 20.7 GPa and from 106.3 to 240.0 GPa, respectively. Both the H/E ratio and critical adhesion load values follow the same trend and increase from 0.077 to 0.086 and from 1.55 to 3.85 N, respectively.

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