Investigations of In2O3 Added SiC Semiconductive Thin Films and Manufacture of a Heterojunction Diode
Chia-Te Liao,
Chia-Yang Kao,
Zhi-Ting Su
et al.
Abstract:This study involved direct doping of In2O3 into silicon carbide (SiC) powder, resulting in 8.0 at% In-doped SiC powder. Subsequently, heating at 500 °C was performed to form a target, followed by the utilization of electron beam (e-beam) technology to deposit the In-doped SiC thin films with the thickness of approximately 189.8 nm. The first breakthrough of this research was the successful deposition of using e-beam technology. The second breakthrough involved utilizing various tools to analyze the physical an… Show more
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