Investigations of microstructures and thermoelectric properties of TiNiSn half-Heusler compounds with micro- and nano-scale copper additions

Liu, Hongjun; Xu, Pengfei; Huang, Ming; Xu, Biao; Wang, Yifeng; Tang, Guodong; Yang, Sen

doi:10.1016/j.jallcom.2023.171728

Cited by 3 publications

(2 citation statements)

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“…23−26 Our previous work indicates that in situ metallic or semimetallic phases with high charge mobility can decouple electron and phonon transportation. 27,28 However, the Seebeck coefficient still decreases at high temperatures. 6 The semiconductors can also be selected but remain sparse in the ZrNiSn system investigation.…”

Section: Introductionmentioning

confidence: 99%

“…Although most insulating phases exhibit good thermal stability and serve as reliable phonon scattering centers, they cannot compensate for the scarcity of electrical properties. − Our previous work indicates that in situ metallic or semimetallic phases with high charge mobility can decouple electron and phonon transportation. , However, the Seebeck coefficient still decreases at high temperatures . The semiconductors can also be selected but remain sparse in the ZrNiSn system investigation.…”

Section: Introductionmentioning

confidence: 99%

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Thermoelectric Performance Improvement in the ZrNiSn-Based Composite via Modulating Si Addition

Jia,

Zhu,

Shi

et al. 2024

ACS Appl. Mater. Interfaces

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To ensure optimal performance, ZrNiSn is required to possess a low thermal conductivity and exhibit minimal bipolar effects under high-temperature conditions. This study demonstrates the integration of silicon (Si) at different doping levels into ZrNiSn. The composites consist of secondary phases of in situ ZrNiSi and Si. At a temperature of 873 K, the Seebeck coefficient experiences a 16% increase, despite the charge carrier concentration increasing three times as a result of the electron injection from ZrNiSi. The phenomenon can be elucidated by the introduction of Si, which causes energy filtering and inhibits the flow of minority charge carriers. When the doping levels in n-or ptype Si reach high levels (10 19 to 10 20 cm −3 ), the mixed interfaces ZrNiSn/ZrNiSi and ZrNiSn/Si reduce the thermal conductivity by 15%, resulting in a 50% increase in zT. These findings indicate that electron transfer in ZrNiSn can be regulated by precise doping in Si. They also demonstrate that incorporating an optimal p-type semiconductor can enhance the thermoelectric performance of ntype ZrNiSn. Additionally, a novel approach is proposed to separate electrical conductivity and the Seebeck coefficient by designing unique secondary phase interfaces.

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Section: Introductionmentioning

confidence: 99%