Investigations of monoclinic- and orthorhombic-based (BxGa1−x)2O3 alloys

Abstract

Gallium oxide has been attracting much interest due to its tremendous potential for power device application. The (BxGa1−x)2O3 ternary alloys of monoclinic and orthorhombic phases with the B-content covering the full composition were studied using first-principles density functional theory calculations. The effect of the B-content on the structural and electronic properties of (BxGa1−x)2O3 alloys is discussed. The formation enthalpy of the ternary alloys has been investigated, indicating the feasibility of synthesizing (BxGa1−x)2O3 alloys depending on the specified growth temperature condition. In addition, the increase in the B-content in (BxGa1−x)2O3 alloys generally leads to the decrease in lattice constants, implying possible tensile strain if grown on the Ga2O3 substrate. Our analysis on the electronic properties shows that all (BxGa1−x)2O3 alloys exhibit indirect gap property, in which the bandgap increases from 4.83 eV to 6.86 eV in the monoclinic phase and from 5.32 eV to 11.27 eV in the orthorhombic phase when the B-content increases from 0% to 100%. The band alignment between Ga2O3 and B2O3 in the (100)-direction is also presented, showing a type-II and type-I alignment for monoclinic-based and orthorhombic-based alloys, respectively. Our results showed an extremely large conduction band offset of 5.76 eV between orthorhombic-based Ga2O3 and B2O3 alloys. Our studies regarding the electronic and structural properties provide important insight regarding the potential of (BxGa1−x)2O3 alloys for III-oxide-based electronic and optoelectronic device applications.

Integrated Electromagnetic-Thermal Approach to Simulate a GaN-Based Monolithic Half-Bridge for Automotive DC-DC Converter

“…Wide band-gap (WBG) materials, such as gallium nitride (GaN) and silicon carbide (SiC) [3], are those which can satisfy the application's requirements [4,5]. SiC and GaNbased devices are being more and more employed in converters for the automotive environment [6][7][8][9][10][11][12][13][14][15][16][17][18][19] thanks to their superior electrical and thermal performances in comparison to that of silicon (Si). SiC devices are more indicated for high-voltage and high-power, while GaN-based ones are more prone to low-and medium-power high-frequency applications with low and medium voltages.…”

“…Some possible GaN structures are reported in [7]. Nowadays, ultra-wide-bandgap materials such as gallium oxide (Ga 2 O 3 ) [8][9][10], diamond, and aluminium nitride (AlN), have also been gaining attention in the power electronics field, even if at a more infant stage. A review of Ga 2 O 3 -based power MOSFETs can be found in [11].…”

Mathematical Analysis of Two Phase Saturated Nanofluid Influenced by Magnetic Field Gradient

“…It plays an important role when experiments are difficult to conduct for heat transfer simulation. These laws are used for the theoretical computation of heat transfer [8][9][10]. The above discussed laws are used for evaluation of heat flux in two phase fluids as well as regular fluids.…”

Study of Heat Transfer in Magnesium Zinc Zirconium MgZn 6 Zr Alloy Suspended in Engine Oil

“…is will help the alloys in reducing friction drag and enhancing the transfer of heat. ese types of characteristics of nanoparticles and the like are appropriate and applicable to all devices used for cooling or heating purposes [9][10][11][12][13]. Normal nanoparticles, i.e., gold, copper, aluminum, and titanium, and ferrite nanoparticles, i.e., nickel zinc ferrite, manganese zinc ferrite, and magnetite ferrite, were used by scientists and mathematicians in the history [14][15][16][17].…”