2023
DOI: 10.1016/j.jpcs.2023.111529
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Investigations of photoelectrochemical performance of polycrystalline Bi-doped ZnO thin films

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Cited by 8 publications
(2 citation statements)
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“…Poor photocurrent density, low photocurrent-hydrogen transformation efficiency due to a low absorption coefficient [9], greater surface recombination [10,11], and ultraviolet absorption due to a wide band gap (3.3 eV) limit its practical application [12]. Ion doping, quantum dot sensitization [50,51], and composite fabrication have made ZnO visiblerange active [13][14][15].…”
Section: Introductionmentioning
confidence: 99%
“…Poor photocurrent density, low photocurrent-hydrogen transformation efficiency due to a low absorption coefficient [9], greater surface recombination [10,11], and ultraviolet absorption due to a wide band gap (3.3 eV) limit its practical application [12]. Ion doping, quantum dot sensitization [50,51], and composite fabrication have made ZnO visiblerange active [13][14][15].…”
Section: Introductionmentioning
confidence: 99%
“…Indubala and co-workers [54] increased carrier concentration in the ZnO/CuI heterojunction diode with L-alanine capping of ZnO nanorods. Khan and co-workers [55] investigated the photoelectrochemical performance of polycrystalline Bi-doped ZnO thin films. Deva Kumar and co-workers [56] reported on gold-reduced graphene oxide and BiVO 4 /ZnO mixed oxide composite with leveraged charge carrier transport under solar radiation.…”
Section: Introductionmentioning
confidence: 99%