Investigations of SiC semiconductor nanoinclusions formed by sequential ion implantation and annealing in thermally oxidized Si

Abstract

The methods of X-ray photoelectron and extended electron energy loss fine structure (EELFS) spectroscopy were used for the investigation of phase composition and structure of SiO 2 layer implanted sequentially by Si + (energy of 100 keV, dose of 7 × 10 16 cm −2 ) and C + (energy of 50 keV, dose of 7 × 10 16 cm −2 ) ions and postannealed at 1000 or 1100 • C (2 h). The Si-Si and Si-C bonds in carbide (SiC) nanoinclusions and C-C bonds of sp 3 type in carbon inclusions are identified. The concentration of dangling bonds significantly decreases with elevation of annealing temperature. The distribution of SiC nanoinclusions at 1100• C annealing corresponds to the distribution of implanted atoms, whereas sp 3 -C phase is distributed nearly homogeneously over the implanted layer. The ratio of SiC to sp 3 -C quantities is lower when intermediate annealing at 1100• C is provided after Si + implantation. The local atomic structure near the surface is determined from the EELFS. The experimental results demonstrate the physical basis of white photoluminescence, originating from the SiC nanocrystals, diamond-like carbon particles, matrix, and interfacial defects.

Investigation of electronic and atomic structure of tribofilms on the surface of cutting tools with TiAlCrSiYN and multilayer TiAlCrSiYN/TiAlCrN coatings during machining of hardened steels

“…2(c and d) This component of the XPS spectrum with BE close to one of the corresponding pure elements can be interpreted as due to noncompensated interatomic bonds of the surface atoms of Al (dangling bonds). [17,18] It is impossible to expect that the nitride coating is decomposing during the extreme frictional conditions with the formation of pure elements during a harsh oxidation attack. Ti-N and Al-N components are shown on the Ti 2p and Al 2s photoelectron spectra (Fig.…”

The Synthesis of Silicon Nanocrystals by Ion Implantation

“…The ability of ion implantation to implant any species or combination of species into any substrate material has been exploited by many researchers to study the effects of alloying [45][46][47] and doping on the physical properties of the nanocrystals. This includes the formation of SiGe [47] and SiC [46] nanocrystals, the doping of Si nanocrystals with species such as B, P, and Au [48], and the incorporation of optically active impurities such as Er into layers containing Si nanocrystals [49][50][51].…”

Chemical and phase compositions of silicon oxide films with nanocrystals prepared by carbon ion implantation

“…X ray photo electron spectroscopy in combination with depth pro filing of structures by ion sputtering in an ultrahigh vacuum has made it possible to perform a chemical analysis of the surface with a depth resolution of sev eral nanometers. In [3,6], this method was applied to the investigation of the carbon state in SiO 2 films sub jected to combined (Si + + C + ) ion implantation. However, for the case of C + implantation into SiO x layers, we have not found any information available in the literature on the qualitative or quantitative analysis of X ray photoelectron spectroscopy data.…”