Investigations of the adsorption dynamics of D 2  on Si(100)

Kołasiński, Kurt W.; Nessler, Winfried; Bornscheuer, Karl-Heinz; Hasselbrink, Eckart

doi:10.1016/0039-6028(95)00377-0

Cited by 22 publications

(9 citation statements)

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“…Already from these old data one may deduce that the room-temperature sticking coefficient on the terraces of the Si filaments is less than 10 Ϫ8 . Later, Schulze 12 based on a molecular-beam experiment with nozzle temperatures between 300 and 1000 K. The effective Arrhenius energy describing the surface temperature dependence of their sticking coefficient in the range 300 K ϽT s Ͻ650 K is less than 0.1 eV. This rather weak dependence of the sticking coefficient on surface temperature stands in marked contrast to results of the present work (E a ϭ0.7 eV͒.…”

Section: ϫ9contrasting

confidence: 56%

“…Although the reasons for these discrepancies are currently still unclear, it should be kept in mind that the beam experiment lacked the sensitivity to measure sticking coefficients below 5ϫ10 Ϫ6 . 12 For a more detailed comparison of our Si͑100͒ data with the measurements of Kolasinski et al, see Ref. 8.…”

Section: ϫ9mentioning

confidence: 83%

“…The kinetics and dynamics of hydrogen interaction with silicon surfaces have recently become a topic of extensive experimental [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] and theoretical efforts. The great interest is, of course, partly due to the importance of H/Si in semiconductor chemistry.…”

Section: Introductionmentioning

confidence: 99%

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Reaction dynamics of molecular hydrogen on silicon surfaces

et al. 1996

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Bratu, P.; Brenig, W.; Gross, A.; Hartmann, M.; Höfer, U.; Kratzer, Peter; Russ, R. Published in:Physical Review B Link to article, DOI:10.1103/PhysRevB.54.5978 Publication date: 1996 Document VersionPublisher's PDF, also known as Version of record Link back to DTU Orbit Citation (APA): Bratu, P., Brenig, W., Gross, A., Hartmann, M., Höfer, U., Kratzer, P., & Russ, R. (1996). Reaction dynamics of molecular hydrogen on silicon surfaces. Physical Review B, 54(8), 5978-5991. DOI: 10.1103/PhysRevB.54.5978 Reaction dynamics of molecular hydrogen on silicon surfaces Experimental and theoretical results on the dynamics of dissociative adsorption and recombinative desorption of hydrogen on silicon are presented. Using optical second-harmonic generation, extremely small sticking probabilities in the range 10 Ϫ9 Ϫ10 Ϫ5 could be measured for H 2 and D 2 on Si͑111͒7ϫ7 and Si͑100͒2ϫ1.Strong phonon-assisted sticking was observed for gases at 300 K and surface temperatures between 550 K and 1050 K. The absolute values as well as the temperature variation of the adsorption and desorption rates show surprisingly little isotope effect, and they differ only little between the two surfaces. These results indicate that tunneling, molecular vibrations, and the structural details of the surface play only a minor role for the adsorption dynamics. Instead, they appear to be governed by the localized H-Si bonding and Si-Si lattice vibrations. Theoretically, an effective five-dimensional model is presented taking lattice distortion, corrugation, and molecular vibrations into account within the framework of coupled-channel calculations. While the temperature dependence of the sticking is dominated by lattice distortion, the main effect of corrugation is a reduction of the preexponential factor by about one order of magnitude per lateral degree of freedom. Molecular vibrations have practically no effect on the adsorption/desorption dynamics itself, but lead to vibrational heating in desorption with a strong isotope effect. Ab initio calculations for the H 2 interaction with the dimers of Si͑100͒2 ϫ1 show properties of the potential surface in qualitative agreement with the model, but its dynamics differs quantitatively from the experimental results. ͓S0163-1829͑96͒01732-8͔

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confidence: 56%

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Reaction dynamics of molecular hydrogen on silicon surfaces

et al. 1996

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“…adsorption does the H 2 molecule have to overcome an activation barrier, E * ad . Examples are coinage metal surfaces (Cu, Ag, Au), where barriers of up to 50 kJ mol -1 have been determined [11] and other free electron' metals (alkali, alkaline earth and earth metals) or various elemental semiconductor surfaces (Si, Ge) with barriers of similar height [12,13]. Even more illustrative is a two-dimensional representation of the homolytic dissociation reaction (elbow' plot), see Fig.…”

Section: The Principles Of the Interaction Of Hydrogen With Surfaces:mentioning

confidence: 99%

Hydrogen Transfer on Metal Surfaces

Christmann

2006

Hydrogen‐Transfer Reactions

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“…However, the assumption of such a large barrier is in conflict with the known desorption activation energy [5,6] and the estimated bond strength of hydrogen atoms to silicon surface atoms [7]. Moreover, recent experiments have demonstrated that the desorbing molecules do not carry away a large amount of excess energy as translational energy [8] nor in their internal degrees of freedrom [9,10].…”

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confidence: 96%

Dynamics of Molecular Hydrogen Interactions with Silicon Surfaces

Hasselbrink

1995

Ber Bunsenges Phys Chem

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Molecular hydrogen exhibits an exceedingly low dissociative sticking coefficient on the (100) and (111) faces of silicon. This finding would suggest that the molecule experiences a large barrier (> 100 kllmol) when it attempts to adsorb. However the assumption of such a large barrier is in conflict with the known desorption activation energy and the estimated bond strength of hydrogen atoms to silicon surface atoms. In recent experiments it has been observed that the desorbing molecules do not carry away a large extend of excess energy as translational energy nor in their internal degrees of freedrom. This apparent contradiction can be resolved if one considers that the dangling bonds on the silicon surface are localized and that hydrogen adsorption induces significant alterations of the surface structure. Hence, hydrogen adsorption is expected to be activated in degrees of freedrom localized in the surface. This proposition has been substantiated by the observation of an increasing adsorption probability with increasing sample temperature. Recent total energy calculations lend theoretical confirmation to this model.

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Investigations of the adsorption dynamics of D 2 on Si(100)

Cited by 22 publications

References 23 publications

Reaction dynamics of molecular hydrogen on silicon surfaces

Reaction dynamics of molecular hydrogen on silicon surfaces

Hydrogen Transfer on Metal Surfaces

Dynamics of Molecular Hydrogen Interactions with Silicon Surfaces

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