Investigations of the isotropic etch of an ICP source for silicon microlens mold fabrication

Larsen, Kim Lambertsen; Ravnkilde, Jan Tue; Hansen, Ole

doi:10.1088/0960-1317/15/4/028

Cited by 50 publications

(42 citation statements)

References 18 publications

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“…The appearance of the roughness was different from the roughness seen in the masked etch but comparable to roughness type I, as reported in Ref. 13.…”

Section: Resultssupporting

confidence: 74%

Study of the Roughness in a Photoresist Masked, Isotropic, SF[sub 6]-Based ICP Silicon Etch

Larsen¹,

Petersen²,

Hansen

2006

J. Electrochem. Soc.

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In this paper we study the etching behavior and the resulting roughness in photoresist-masked isotropic silicon plasma etch performed in an inductively coupled plasma ͑ICP͒ etcher using SF 6 . We report detailed observations of the resulting roughness for various etching parameters, covering: pressure from 2.5 to 70 mTorr, SF 6 flow rate from 50 to 300 sccm, platen power from 0 to 16 W, and ICP power from 1000 to 3000 W. Etch processes with a normalized roughness below 0.005 were found at low pressure, p = 10 mTorr, while larger normalized roughness, above 0.02, occurred at higher pressures, p = 40-70 mTorr. Here the normalized roughness is the ratio of the roughness amplitude to the etch depth. The rough etching processes showed characteristic high-aspect-ratio and crystal-orientation-dependent surface morphology. The temporal evolution of this roughness was studied, and observations suggest a gradual buildup of surface contamination ͑redeposits͒ originating from the photoresist mask. A model was used to analyze the etched profiles with respect the internal etching conditions. The almost isotropic etching profiles, obtained in both rough and smooth etching processes, are generally highly radical-dependent; however, the surface roughness itself can be reduced dramatically using an ion energy above a certain threshold value. The roughness causing mechanism is discussed.

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“…The appearance of the roughness was different from the roughness seen in the masked etch but comparable to roughness type I, as reported in Ref. 13.…”

Section: Resultssupporting

confidence: 74%

Study of the Roughness in a Photoresist Masked, Isotropic, SF[sub 6]-Based ICP Silicon Etch

Larsen¹,

Petersen²,

Hansen

2006

J. Electrochem. Soc.

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“…With some smoothing of the substrate surface it will be possible to make g significantly larger than . This could be achieved, for example, by plasma etching, 29 The micro-mirrors used in these resonators are immediately applicable to a wide variety of devices as their manufacture only involves standard silicon etching and optical coating techniques. The repeatability of the etching and coating means that patterns of many cavity mirrors can be produced rapidly and consistently.…”

Section: L ͑3͒mentioning

confidence: 99%

Microfabricated high-finesse optical cavity with open access and small volume

Trupke

Hinds

Eriksson

et al. 2005

Applied Physics Letters

155

145

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We present a microfabricated optical cavity, which combines a very small mode volume with high finesse. In contrast to other micro-resonators, such as microspheres, the structure we have built gives atoms and molecules direct access to the high-intensity part of the field mode, enabling them to interact strongly with photons in the cavity for the purposes of detection and quantum-coherent manipulation. Light couples directly in and out of the resonator through an optical fiber, avoiding the need for sensitive coupling optics. This renders the cavity particularly attractive as a component of a lab-on-a-chip, and as a node in a quantum network. © 2005 American Institute of Physics. ͓DOI: 10.1063/1.2132066͔ High-finesse optical cavities are central to many techniques and devices in atomic physics, 1 optoelectronics, 2 chemistry, 3 and biosensing. 4 As well as selecting spectral and spatial distributions of the classical electromagnetic field, optical cavities make it possible to harness quantum effects for applications in quantum information science. 1,5 For example, it is possible to produce single photons on demand using atoms 6,7 or ions 8 inside a cavity and to create entanglement between those that share a cavity photon. 9-11 Similar ideas are being pursued with quantum dots. 12,13 Microscopic cavities are of particular interest 14 because small volume gives the photon a large field and because they offer the possibility of integration with micro-opto-electro-mechanical systems 15 and atom chips. [16][17][18] Here we present a simple and innovative method for fabricating microscopic, broadly-tuneable, high-finesse cavities. These have the significant new feature that their structure is open, giving an atom, molecule or quantum dot direct access to an antinode of the cavity mode. This structure is therefore ideally suited for detecting small numbers of particles, 19 and miniaturizing quantum devices based on strong dipole-cavity coupling.We have made high-finesse, open optical cavities that operate in length at a range of approximately 20-200 m. Each cavity is formed by a concave micro-mirror and the plane tip of an optical fiber, both coated for reflection, as illustrated in Fig. 1͑a͒. Arrays of concave mirrors are fabricated in silicon by wet-etching isotropically through circular apertures in a lithographic mask using a mixture of HF and HNO 3 in acetic acid. The etch bath in which the wafer is immersed undergoes continuous agitation during the etching process, resulting in an approximately spherical surface profile, as shown in Fig. 1͑b͒. The etch rate and the final morphology of the silicon surface are highly dependent on the agitation and on the concentration of each component in the etchant. 20 Precise control over these factors gives us repeatable surface profiles in the silicon with 6 nm rms roughness. In our first experiment, gold is sputtered onto an array of mirror templates to form a layer 100 nm thick with a surface roughness of 10 nm. The plane mirror of the cavity is a dielectric multilayer, w...

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“…It is recently found that the isotropic etching capability of ICP has advantages of high silicon etching rate, good controllability, and high SiO:Si etching selectivity, etc. over anisotropic etching [3,4].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of high-speed polyimide-based humidity sensor using anisotropic and isotropic etching with ICP

et al. 2009

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Investigations of the isotropic etch of an ICP source for silicon microlens mold fabrication

Cited by 50 publications

References 18 publications

Study of the Roughness in a Photoresist Masked, Isotropic, SF[sub 6]-Based ICP Silicon Etch

Study of the Roughness in a Photoresist Masked, Isotropic, SF[sub 6]-Based ICP Silicon Etch

Microfabricated high-finesse optical cavity with open access and small volume

Fabrication of high-speed polyimide-based humidity sensor using anisotropic and isotropic etching with ICP

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