Investigations of thermal, optical and electrical properties of Se85In15−xBix glasses and thin films

Role of Bismuth incorporation on the structural and optical properties in BixIn35‐xSe65 thin films for photonic applications

“…10 However, the previous studies are limited to only up to 9% Bi addition into In-Se alloy by replacing Indium and keeping the Se % constant. 27 The effect of higher Bi% into In-Se matrix is the main aim of the present investigation. So, to have a detailed and systematic study on the modifications in several properties by varying the bismuth concertation in the Bi x In 35-x Se 65 films encourages us for the study.…”

“…10 The thermal stability, activation energy along optical parameters were greatly influenced by the variation in Bi concentration that makes these materials suitable for optical and electronic applications. 27 Moreover in the Bi-In-Se system, the replacement of Indium with Bismuth provides a constant coordination number (Z = 2.25) that represented the structure in the floppy state which helps to analyze the modifications in the network topology apart from the CTR behavior of the Bi-In-Se system. 10,27 The authors have found crystalline phase formation with 1% Bi additive Bi x In 25x Se 75 thin films.…”

“…27 Moreover in the Bi-In-Se system, the replacement of Indium with Bismuth provides a constant coordination number (Z = 2.25) that represented the structure in the floppy state which helps to analyze the modifications in the network topology apart from the CTR behavior of the Bi-In-Se system. 10,27 The authors have found crystalline phase formation with 1% Bi additive Bi x In 25x Se 75 thin films. 10 However, the previous studies are limited to only up to 9% Bi addition into In-Se alloy by replacing Indium and keeping the Se % constant.…”

Effect of ambient argon pressure on the structural, optical and electrical properties of non-crystalline Se85Te3Bi12 nano-thin films

“…The addition of Te also improves the efficiency of solar cells for electricity generation as Te is a heat-resistant and highly corrosive metalloid [33]. Bismuth is chosen as the dopant in Se-Te Network, due to its low melting point Bi is considered in general for making low-melting alloys [34]. Bi-doped alloys serve in automatic fire sprinkler systems, fire detection systems, electrical fuses, etc [35].…”

The impact of fluence dependent proton ion irradiation on the structural and optical properties of Bi5In30Se65 thin films for nonlinear optical devices

“…18 The replacement of indium with bismuth provides a constant coordination number (Z ¼ 2.25) that represented the structure in the oppy state which helps to determine the modications in the network topology apart from the CTR behavior of the Bi-In-Se system. 18,19 The modications of several properties by varying the bismuth concentration in the Bi x In 35Àx Se 65 lms results in the crystallinity of the highly Bidoped lms with a decrease in the optical bandgap. 20 Until now there has been no relevant research on the impact of ion irradiation on Bi-In-Se thin lms.…”