2021
DOI: 10.1007/s10854-021-07369-1
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Investigations on BaMnxTi1-xO3 ferroelectric film based MFS structure for non-volatile memory application

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Cited by 3 publications
(1 citation statement)
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“…Exchange bias has also been demonstrated to be a useful tool for studying the mechanism of dopant-induced ferromagnetism in this study [18]. Similarly, there is a report by S. K. Das et al Magnetism, particularly ferromagnetism, can be generated in a oxide ferroelectric nonmagnetic like barium titanate (BaTiO3) by selecting appropriate dopants [42]. The influence of Co and Hf substitution on the structural, magnetic, and ferroelectric characteristics of BaTiO3 was examined using a polycrystalline specimen with great density of BaTi0.9Hf0.05Co0.05O3 [43].…”
Section: Diluted Ferromagnetic Semiconductorsupporting
confidence: 58%
“…Exchange bias has also been demonstrated to be a useful tool for studying the mechanism of dopant-induced ferromagnetism in this study [18]. Similarly, there is a report by S. K. Das et al Magnetism, particularly ferromagnetism, can be generated in a oxide ferroelectric nonmagnetic like barium titanate (BaTiO3) by selecting appropriate dopants [42]. The influence of Co and Hf substitution on the structural, magnetic, and ferroelectric characteristics of BaTiO3 was examined using a polycrystalline specimen with great density of BaTi0.9Hf0.05Co0.05O3 [43].…”
Section: Diluted Ferromagnetic Semiconductorsupporting
confidence: 58%