Investigations on Breakdown Voltage of Trench-gate-type Super Barrier Rectifier with Stepped Oxide

Abstract

A novel trench-gate-type super barrier rectifier (TSBR) with stepped oxide (SO-TSBR) is proposed and researched by device simulator. As an improved TSBR structure, the proposed SO-TSBR with high breakdown voltages be effective in achieving low forward voltage drop. Simulations have demonstrated the two-dimensional charge coupling in the N-drift region resulting in an optimal electric field distribution. The 280 V SO-TSBR used for the numerical simulations decreases the on-state drop by 26.6% at the forward current density of 2.5 A/cm2 than that of the conventional TSBR. The SO-TSBR with deep trench structure reduces further the forward voltage drop by 11.0% at the forward current density of 20 A/cm2.

A Novel Trench MOS Barrier Schottky Contact Super Barrier Rectifier

“…Recently, the concept of Schottky contact super barrier rectifier (SSBR) has been proposed and verified by simulation and experiment results by our group [14]- [17]. SSBR, which is different from SBR or MOS Channel Diode [18]- [21], shows good performances in simple manufacturing process, small forward voltages, low reverse leakage currents and high-temperature reliability. Furthermore, all the presented SSBRs are with a breakdown voltage of tens of volts.…”