Investigations on cobalt doped GaN for spintronic applications

Basha, S. Munawar; Ramasubramanian, S.; Rajagopalan, M.; Kumar, J.; Kang, Tae Won; Subramaniam, N. Ganapathi; Kwon, Younghae

doi:10.1016/j.jcrysgro.2010.10.015

Cited by 17 publications

(3 citation statements)

References 20 publications

(17 reference statements)

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“…GaN is intended to become one of the next-generation technologies for space exploration. [4,5] Currently, GaN has experienced rapid progress in material growth, processing, and device technology over the past decades. Donor dopants using Si or O, and acceptor dopants using Mg or Zn are usually performed in GaN.…”

Section: Introductionmentioning

confidence: 99%

Surface chemical disorder and lattice strain of GaN implanted by 3-MeV Fe¹⁰⁺ ions

Yang¹,

Feng²,

Jiang³

et al. 2022

Chinese Phys. B

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Chemical disorder on the surface and lattice strain in GaN implanted by Fe10+ ions are investigated. In this study, 3-MeV Fe10+ ions fluence ranges from 1 × 1013 ions/cm2 to 5 × 1015 ions/cm2 at room temperature. X-ray photoelectron spectroscopy, high-resolution x-ray diffraction, and high-resolution transmission electron microscopy were used to characterize lattice disorder. The transition of Ga-N bonds to oxynitride bonding is caused by ion sputtering. The change of tensile strain out-of-plane with fluence was measured. Lattice disorder due to the formation of stacking faults prefers to occur on the basal plane.

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Section: Introductionmentioning

confidence: 99%

Surface chemical disorder and lattice strain of GaN implanted by 3-MeV Fe¹⁰⁺ ions

Yang¹,

Feng²,

Jiang³

et al. 2022

Chinese Phys. B

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“…Gallium nitride with a direct band gap (3.4 eV) is one of the ideal materials for ultraviolet (UV) and blue emitters, high-speed FETs and high-power electronic devices, which makes it a suitable candidate to develop spintronic devices. There are different reports on the doping of GaN with other TM and rare-earth elements, such as Mn [ 9 , 10 , 11 ], Cr [ 12 , 13 , 14 ], Gd [ 15 , 16 ], Dy [ 14 ], Eu [ 17 ], Co [ 18 , 19 , 20 , 21 , 22 , 23 , 24 ], V [ 25 ] and Fe [ 26 , 27 , 28 , 29 , 30 , 31 ]. These studies were mainly focused on bulk semiconductors, but the demand of next generation electronic devices with a minimum size but the same extraordinary properties as bulk material is increasing in the society.…”

Section: Introductionmentioning

confidence: 99%

High Quality Growth of Cobalt Doped GaN Nanowires with Enhanced Ferromagnetic and Optical Response

et al. 2020

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Group III–V semiconductors with direct band gaps have become crucial for optoelectronic and microelectronic applications. Exploring these materials for spintronic applications is an important direction for many research groups. In this study, pure and cobalt doped GaN nanowires were grown on the Si substrate by the chemical vapor deposition (CVD) method. Sophisticated characterization techniques such as X-ray diffraction (XRD), Scanning Electron Microscope (SEM), Energy Dispersive X-Ray Spectroscopy (EDS), Transmission Electron Microscopy (TEM), High-Resolution Transmission Electron Microscopy (HRTEM) and photoluminescence (PL) were used to characterize the structure, morphology, composition and optical properties of the nanowires. The doped nanowires have diameters ranging from 60–200 nm and lengths were found to be in microns. By optimizing the synthesis process, pure, smooth, single crystalline and highly dense nanowires have been grown on the Si substrate which possess better magnetic and optical properties. No any secondary phases were observed even with 8% cobalt doping. The magnetic properties of cobalt doped GaN showed a ferromagnetic response at room temperature. The value of saturation magnetization is found to be increased with increasing doping concentration and magnetic saturation was found to be 792.4 µemu for 8% cobalt doping. It was also depicted that the Co atoms are substituted at Ga sites in the GaN lattice. Furthermore N vacancies are also observed in the Co-doped GaN nanowires which was confirmed by the PL graph exhibiting nitrogen vacancy defects and strain related peaks at 455 nm (blue emission). PL and magnetic properties show their potential applications in spintronics.

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“…It is suggested by Furdyna that the exchange interactions among the d electrons of transition metals and s and p electrons of host material are responsible for the optoelectronic and magnetic properties of DMS. The room-temperature ferromagnetism in GaN − and ZnO , has further infused new spirit in the field of DMS materials.…”

Section: Introductionmentioning

confidence: 99%

Effect of Ni Charge States on Structural, Electronic, Magnetic, and Optical Properties of InN

et al. 2013

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The first-principles study of Ni-doped InN has been carried out to explore the doping effect of various charge states of Ni on the structural, electronic, magnetic, and optical properties of InN using generalized gradient approximation. Structural properties like lattice parameters, aspect ratios, bond lengths, and formation energies of (In, Ni) N are used to determine the stability of each doped system. The formation energies of (In, Ni)N systems decrease with the increase in charge state of nickel, while the bond lengths show an opposite trend. The DOS diagram shows that the introduction of Ni-d states within the bang gap region reduces the band gap for Ni(1+)- and Ni(2+)-doped InN, while the isolated states are generated in the case of Ni(3+)- and Ni(4+)-doped systems. The Ni(1+)-, Ni(3+)-, and Ni(4+)-doped InN systems are ferromagnetic in nature, whereas the (In, Ni(2+))N depicts spin-glass-like behavior. The best possible magnetization is obtained for (In, Ni(4+))N with a total magnet moment of 2.42 μB per supercell. Because of the presence of nickel impurities, the optical properties of InN have been significantly improved. The pure and Ni(3+)- and Ni(4+)-doped InN systems show nearly the same values of absorption edges (∼0.56 eV), in contrast with the Ni(1+)- and Ni(2+)-doped systems, where these values are 0.37 and 0.51 eV, respectively. The shift in absorption edges of Ni(1+)- and Ni(2+)-doped InN to lower energies and increase in the intensity of absorption and broadening of absorption peaks can be attributed to the pronounced band-gap reduction for these systems. A negligible shift of absorption edges in the case of Ni(3+)- and Ni(4+)- doped InN is the characteristic of isolated charge states introduced around the Fermi level, which inhibit the band gap reduction, and hence the optical properties are not improved as expected. This study demonstrates an important fact that for best possible optical device applications Ni(1+)-doped InN system is excellent, while for better magnetic properties the (In, Ni(4+))N is more suitable.

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Investigations on cobalt doped GaN for spintronic applications

Cited by 17 publications

References 20 publications

Surface chemical disorder and lattice strain of GaN implanted by 3-MeV Fe¹⁰⁺ ions

Surface chemical disorder and lattice strain of GaN implanted by 3-MeV Fe¹⁰⁺ ions

High Quality Growth of Cobalt Doped GaN Nanowires with Enhanced Ferromagnetic and Optical Response

Effect of Ni Charge States on Structural, Electronic, Magnetic, and Optical Properties of InN

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Investigations on cobalt doped GaN for spintronic applications

Cited by 17 publications

References 20 publications

Surface chemical disorder and lattice strain of GaN implanted by 3-MeV Fe10+ ions

Surface chemical disorder and lattice strain of GaN implanted by 3-MeV Fe10+ ions

High Quality Growth of Cobalt Doped GaN Nanowires with Enhanced Ferromagnetic and Optical Response

Effect of Ni Charge States on Structural, Electronic, Magnetic, and Optical Properties of InN

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Surface chemical disorder and lattice strain of GaN implanted by 3-MeV Fe¹⁰⁺ ions

Surface chemical disorder and lattice strain of GaN implanted by 3-MeV Fe¹⁰⁺ ions