Investigations on GaAsSbN/GaAs quantum wells for 1.3–1.55μm emission

Harmand, J. C.; Ungaro, G.; Ramos, J. I.; Rao, E. V. K.; Saint-Girons, Guillaume; Teissier, R.; Roux, G. Le; Largeau, L.; Patriarche, G.

doi:10.1016/s0022-0248(01)00765-5

Cited by 56 publications

(46 citation statements)

References 15 publications

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“…Although, most of the initial work has been focused on the GaAs based HMA it has been also shown that similar modifications of the electronic band structure is observed in other group III-V dilute nitrides including InNxP1-x, GaNxP1-x, GaNxSb1-x. [21,22,23,24,25,26] Also, comparable or even larger band gap reductions were observed in materials like GaAs1-xBix [27,28], GaN-rich GaN1-xAsx [29] in which electronegative anions are partially replaced by more metallic atoms. Similarly, a large variety of group II-VI based HMAs have been studied including dilute oxides e.g.…”

Section: Introductionmentioning

confidence: 90%

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

Sarney

Новиков

et al. 2016

Semicond. Sci. Technol.

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Highly mismatched alloys (HMAs) is a class of semiconductor alloys whose constituents are distinctly different in terms of size, ionicity and/or electronegativity. Electronic properties of the alloys deviate significantly from an interpolation scheme based on small deviations from the virtual crystal approximation. Most of the HMAs were only studied in a dilute composition limit. Recent advances in understanding of the semiconductor synthesis processes allowed growth of thin films of HMAs under non-equilibrium conditions. Thus reducing the growth temperature allowed synthesis of group III-N-V HMAs over almost the entire composition range. This paper focuses on the GaNxSb1-x HMA which has been suggested as a potential material for solar water dissociation devices. Here we review our recent work on the synthesis, structural and optical characterization of GaN1-xSbx HMA. Theoretical modeling studies on its electronic structure based on the band anticrossing (BAC) model are also reviewed. In particular we discuss the effects of growth temperature, Ga flux and Sb flux on the incorporation of Sb, film microstructure and optical properties of the alloys. Results obtained from two separate MBE growths are directly compared. Our work demonstrates that a large range of direct bandgap energies from 3.4 eV to below 1.0 eV can be achieved for this alloy grown at low temperature. We show that the electronic band structure of GaN1-xSbx HMA over the entire composition range is well described by a modified the BAC model which includes the dependence of the host matrix band edges as well as the BAC model coupling parameters on composition. We emphasize that the modified BAC model of the electronic band structure developed for the full composition of GaNxSb1-x is general and is applicable to any HMA.

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Section: Introductionmentioning

confidence: 90%

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

Sarney

Новиков

et al. 2016

Semicond. Sci. Technol.

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“…5,6 Among these materials, In x Ga 1Ϫx N y As 1Ϫy is an attractive alloy which has been used in active layers of lasers with pulsed and continuouswave emission at 1.31 m. 6,7 However, it has been difficult to obtain lasers of good quality using InGaNAs alloys at 1.55 m wavelength emission. 3,8,9 It has been shown that N-containing samples present a strong photoluminescence ͑PL͒ property degradation. 3,[9][10][11][12][13][14][15] Many works have demonstrated that the disorder in the InGaNAs alloy has a strong effect on the carrier motion, and that the radiative recombinations are generally dominated by localized excitons.…”

Section: Introductionmentioning

confidence: 99%

“…3,8,9 It has been shown that N-containing samples present a strong photoluminescence ͑PL͒ property degradation. 3,[9][10][11][12][13][14][15] Many works have demonstrated that the disorder in the InGaNAs alloy has a strong effect on the carrier motion, and that the radiative recombinations are generally dominated by localized excitons. [11][12][13][14][15] These works also suggest that the microscopic origin of the localized states is related either to the formation of In-N clusters, 11,13,15 or to the well width fluctuations and/or the local strain field induced by the presence of N. 11,14 Ungaro et al 3 have recently demonstrated that semiconductor alloys from the material-GaAsSbN-grown on a GaAs substrate can be used to prepare optical devices that emit light at room temperature in the 1.3-1.55 m wavelength range.…”

Section: Introductionmentioning

confidence: 99%

“…[11][12][13][14][15] These works also suggest that the microscopic origin of the localized states is related either to the formation of In-N clusters, 11,13,15 or to the well width fluctuations and/or the local strain field induced by the presence of N. 11,14 Ungaro et al 3 have recently demonstrated that semiconductor alloys from the material-GaAsSbN-grown on a GaAs substrate can be used to prepare optical devices that emit light at room temperature in the 1.3-1.55 m wavelength range. 3,9 In particular, 100-Å-thick GaAs 0.825 Sb 0.15 N 0.025 /GaAs quantum wells ͑QWs͒ have demonstrated emission at 1.57 m. 9 In the present study, we investigated the temperature dependence of excitonic recombination in the GaAsSbN/GaAs QWs in the 9-296 K range. Two QWs with the same width and different N concentrations were analyzed.…”

Section: Introductionmentioning

confidence: 99%

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Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

Lourenço

Dias

Poças

et al. 2003

Journal of Applied Physics

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GaAsSbN/GaAs strained-layer single quantum wells grown on a GaAs substrate by molecular-beam epitaxy with different N concentrations were studied using the photoluminescence ͑PL͒ technique in the temperature range from 9 to 296 K. A strong redshift in optical transition energies induced by a small increase in N concentration has been observed in the PL spectra. This effect can be explained by the interaction between a narrow resonant band formed by the N-localized states and the conduction band of the host semiconductor. Excitonic transitions in the quantum wells show a successive red/blue/redshift with increasing temperature in the 2-100 K range. The activation energies of nonradiative channels responsible for a strong thermal quenching are deduced from an Arrhenius plot of the integrated PL intensity.

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“…These materials belong to a broad class of highly mismatched alloys (HMA) in which the metallic anions (Te in this case) are partially replaced by much more electronegative atoms (i.e., Se). The most wellstudied group of HMAs is the IIIV 1-x N x alloys in which the more electronegative N replaces less electronegative, more metallic As [3], P [4] or Sb [5] atoms. The electronic structure of such alloys is to a large extent determined by the interaction between the highly localized level of N and the extended states of the N-free host matrix [6][7][8].…”

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confidence: 99%

Band anticrossing effects in MgyZn1−yTe1−xSex alloys

Walukiewicz

et al. 2002

Applied Physics Letters

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The electronic structures of MgyZn1−yTe1−xSex alloys were studied by optical absorption and photoluminescence techniques under applied hydrostatic pressure. In samples with both x and y≠0, the band gap exhibits a strongly nonlinear pressure dependence which is similar to the effects observed previously in ZnTe1−xSex and ZnTe1−xSx ternaries and that is well explained by the anticrossing interaction of the selenium localized electronic states with the conduction band of the matrix. In contrast, the pressure dependence of the band gap in MgyZn1−yTe (i.e., x=0) is not significantly changed in form from that of ZnTe; it is concluded that the effects of alloying MgTe with ZnTe can be well understood within the virtual crystal approximation.

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Investigations on GaAsSbN/GaAs quantum wells for 1.3–1.55μm emission

Cited by 56 publications

References 15 publications

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

Band anticrossing effects in MgyZn1−yTe1−xSex alloys

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Investigations on GaAsSbN/GaAs quantum wells for 1.3–1.55μm emission

Cited by 56 publications

References 15 publications

Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties

Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

Band anticrossing effects in MgyZn1−yTe1−xSex alloys

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Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties