Investigations on morphology, growth mode and indium incorporation in MOCVD grown InGaN/n-GaN heterostructures

Abstract

InGaN layers were grown on n-GaN/GaN/sapphire template using metal organic chemical vapor deposition system by varying Indium (In) flow rate as 11, 13 and 14 µmol/min. The nanoisland growth mode was observed by atomic force microscopy. The thickness and composition of In in the InGaN layers were determined by high resolution X-ray diffraction technique. The composition of In was found to be 15-17% depending on the In flow rate. Photoluminescence from the InGaN layers exhibit multiple peaks ranging between 479 to 657nm, originating from the distribution of In-rich InGaN nanoislands of various sizes giving rise to localized excitons due to the In composition fluctuations. It is interesting to note that, peak emissions at 539 nm, 549 nm and 543 nm showed red and blue shift with varying In flow rate of InGaN nanoisland structures which can be attributed to the quantum confined stark effect and

X-Rays Diffraction Study of InGaN/GaN Heterostructures Grown by MOCVD Technique at Different Temperatures

“…1, a small bump beside the InGaN peaks for all samples can be observed. This indicates a slight indium composition fluctuation due to the inhomogeneous indium distribution across the thin film [16]. The indium composition fluctuations are estimated to vary around ± 1-6% for all samples.…”

Investigations on Multiexciton Generation and Hot Electron Transfer Process in CdTe QD-Decorated TiO2 Nanostructures for Effective Photocatalytic Activity

“…The superoxide radicals thus formed react with the holes and photogenerated electrons, forming hydroxyl radical species (OH • ) (steps 3 and 4). The active species (O 2 •– and OH • ) formed play a key role in degrading the organic pollutants (steps 5 and 6). , …”

“…•− and OH • ) formed play a key role in degrading the organic pollutants (steps 5 and 6). 14,49 The steps involved in degradation reaction pathways are as follows. It can be concluded that due to the effect of the wide band gap of TiO 2 NRs (3.04 eV), the probability of electron−hole pair generation or annihilation will be very less.…”

Numerical simulation of homojunction p-i-n In0.4Ga0.6N solar cell with different absorber layer configurations

“…This is mainly attributed to its tunable direct bandgap energy characteristics from 0.70 eV (infrared) to 3.42 eV (ultraviolet) by varying the indium (In) composition. Thus, InGaN is an excellent candidate for solar cell application since it can cover almost the entire spectrum from solar irradiation [5]. The incorporation of indium nitride (InN) improved the radiation resistance of InGaN when subjected to proton irradiation, which dominates the radiation environment in space.…”