2020
DOI: 10.1016/j.matdes.2020.108718
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Investigations on the mechanism of microweld changes during ultrasonic wire bonding by molecular dynamics simulation

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Cited by 30 publications
(21 citation statements)
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“…The angle between trace HB of the wire bonder head and the vertical axis through point H was defined as the first reverse angle θ 1 (Figure 7b). The distance between point H and E was defined as Trace height (TH), as shown in (6), (7) and (8). 22 As there are three kinks on the wire loops resulted from the flat-looping type, either kink 2 nd or kink 3 rd can be the highest of the final loop profile.…”
Section: ' 'mentioning
confidence: 99%
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“…The angle between trace HB of the wire bonder head and the vertical axis through point H was defined as the first reverse angle θ 1 (Figure 7b). The distance between point H and E was defined as Trace height (TH), as shown in (6), (7) and (8). 22 As there are three kinks on the wire loops resulted from the flat-looping type, either kink 2 nd or kink 3 rd can be the highest of the final loop profile.…”
Section: ' 'mentioning
confidence: 99%
“…Gold wire bonding is the most commonly used technology to interconnect chips with low cost in microelectronics packaging. Since its invention in the 1960s, wire bonding has evolved into a dominant form of first-level chip or circuit interconnect with a large number of fixed user groups and equipment reserves [6][7][8][9][10][11][12][13]. Threedimensional stacked packaging through large-span-ratio and high-density wire bonding can maximize chip integration, boost the device performance, reduce the device size, and shorten the development cycle, which will further ensure a smooth transition of interconnect technology in the Post Moore Era [14].…”
Section: Introductionmentioning
confidence: 99%
“…On the atomic scale, molecular dynamics (MD) simulations have exerted attention on the atomic and strain-energy distributions at Al/Al, Cu/Al, Cu/Cu and Ti/Al interfaces joined via an UV-assisted method, 27–35 giving insights into the effect of UVs on the structural evolution of joints. However, there are still no direct images capturing atomic-scale motions of dislocations which, together with atomic diffusion, are involved and essential in material flow and plastic deformation in Mg/Al UVeFSW processes.…”
Section: Introductionmentioning
confidence: 99%
“…The MD simulation is a good auxiliary research tool to investigate the evolution of atomic arrangements and dislocation configurations at atomic scale [ 24 , 25 , 26 , 27 , 28 ]. It can overcome the limitations of experimental conditions and exhibit atoms motion trajectories.…”
Section: Introductionmentioning
confidence: 99%