Investigations on the nonidealities in Pd/n-GaN Schottky diodes grown by MOCVD

Suresh, S.; Balaji, M.; Ganesh, V.; Baskar, K.

doi:10.1016/j.jallcom.2010.06.076

Cited by 9 publications

(6 citation statements)

References 26 publications

(29 reference statements)

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“…[4].) may indicate the presence of additional tunneling mechanism, such as trap-assisted tunneling, [3,13] for the devices used for measurement. 1) to that simulated using Eq.…”

Section: Resultsmentioning

confidence: 99%

On the reverse leakage current of Schottky contacts on free-standing GaN at high reverse biases

Lei¹,

Su²,

Wu³

et al. 2017

Chinese Phys. B

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In this work, a dislocation-related tunneling leakage current model is developed to explain the temperature-dependent reverse current-voltage (I-V -T ) characteristics of a Schottky barrier diode fabricated on free-standing GaN substrate for reverse-bias voltages up to −150 V. The model suggests that the reverse leakage current is dominated by the direct tunneling of electrons from Schottky contact metal into a continuum of states associated with conductive dislocations in GaN epilayer. A reverse leakage current ideality factor, which originates from the scattering effect at metal/GaN interface, is introduced into the model. Good agreement between the experimental data and the simulated I-V curves is obtained.

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“…[4].) may indicate the presence of additional tunneling mechanism, such as trap-assisted tunneling, [3,13] for the devices used for measurement. 1) to that simulated using Eq.…”

Section: Resultsmentioning

confidence: 99%

On the reverse leakage current of Schottky contacts on free-standing GaN at high reverse biases

Lei¹,

Su²,

Wu³

et al. 2017

Chinese Phys. B

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show abstract

“…3(b). The turn-on voltage, also identified as the diffusion or built-in potential, would correspond to a potential barrier such that the carrier has to overcome in order to contribute to forward current [13]. The observed V th value probably attributed to the work function difference between n-Ga 0.29 Al 0.71 As and p-GaAs.…”

Section: Structural and Morphology Characterizationsmentioning

confidence: 99%

“…In addition, metal organic chemical vapor deposition (MOCVD) [8,9,[12][13][14][15] is another technique that could also provide all the requirements for fabricating high efficiency solar cells. This is because MOCVD can grow semiconductors with large area and ultra-thin crystal layer with high uniformity and high-quality crystals, and with uniform doping profile necessary for an abrupt junction.…”

Section: Introductionmentioning

confidence: 99%

“…Since the solar spectrum is broad by nature, the window effect for high-performance solar cells is also feasible by MOCVD using lattice-matched AlGaAs mixed crystals. Therefore, despite the high investment cost, the solar cell structure made from III-V compound semiconductors could be optimized and fabricated by MOCVD [8,9,[12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

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Influence of temperature and illumination on the characteristics of nanocrystalline Ga0.29 Al0.71As based heterojunction prepared by MOCVD

Farag

2011

Journal of Alloys and Compounds

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“…Metal nitrides such as gallium nitride and its alloys are found to be promising alternatives as ammonia sensors due to their properties such as excellent chemical stability, higher mechanical and thermal stability, high electron mobility. [ 21–24 ] GaN‐based gas sensors have begun to be developed for detections of gases such as CO 2 , CH 4 , H 2 , etc. [ 25–28 ] Gallium nitride‐based gas sensors have been investigated theoretically for various gas molecules such as SO 2 , NO 2 , NH 3 , H 2 S, CO, H 2 , CO 2 with the help of density functional theory calculations.…”

Section: Introductionmentioning

confidence: 99%

GaN and InGaN Based Nanocomposites for Ammonia Gas Sensing Applications

Balaji

Ravichandran

2021

Physica Status Solidi (b)

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Gallium nitride (GaN) and indium gallium nitride (InGaN) nanostructures, and their nanocomposites with reduced graphene oxide (rGO) are prepared by solvothermal method and used as sensing materials for ammonia gas. The ammonia sensing characteristics are studied by coating the synthesized GaN and InGaN nanostructures, and their nanocomposites on interdigitated electrodes. The sensing parameters, i.e., sensing response, selectivity, and stability, are studied for various operating temperatures and relative humidity. The pristine GaN and InGaN exhibit a sensing response of 23.8% and 28.1% for 200 ppm concentration at 300 K, whereas the nanocomposites of GaN and InGaN show an increased response of 37.4% and 44.2%. This improvement in the nanocomposites maybe ascribed to the better conductivity, higher number of gas adsorption sites and reduced bandgap. It is found that these materials are an excellent choice for ammonia gas sensing application.

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Investigations on the nonidealities in Pd/n-GaN Schottky diodes grown by MOCVD

Cited by 9 publications

References 26 publications

On the reverse leakage current of Schottky contacts on free-standing GaN at high reverse biases

On the reverse leakage current of Schottky contacts on free-standing GaN at high reverse biases

Influence of temperature and illumination on the characteristics of nanocrystalline Ga0.29 Al0.71As based heterojunction prepared by MOCVD

GaN and InGaN Based Nanocomposites for Ammonia Gas Sensing Applications

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