Investigations on the nucleation parameters of InGaAs grown on InP during LPE

Jothilingam, R.; Dhanasekaran, R.; Ramasamy, P.

doi:10.1007/bf00921249

Cited by 2 publications

(2 citation statements)

References 24 publications

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“…For SWIR (hyperspectral) imaging applications In 0.53 Ga 0.47 As, grown lattice matched on InP [4] is the preferred material scheme. After the deposition of an antireflective coating on the backside of the wafer, the detector material can be used 'as is", whereas for the Ge and InSb the substrate needs to be thinned down to make the detector sensitive.…”

Section: Detector Interfacingmentioning

confidence: 99%

Low-noise, fast frame-rate InGaAs 320 x 256 FPA for hyperspectral applications

et al. 2009

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InGaAs is the material of preference for uncooled imaging in the [0.9-1.7 µm] SWIR range, as it can be manufactured on low cost InP substrates in a mainstream technology for optical telecommunications. By removing the substrate the spectral range can be extended to the [0.6 -1.7 µm] range. In this way low cost, room temperature operated FPAs cameras for imaging and hyperspectral applications can be developed. The FPA is built around a low power CTIA stage with 3 S&H capacitors in the 20*20 um 2 unit cell. This approach results in a synchronous shutter operation, which will support both ITR and IWR operation.In IWR mode the integration dead time is limited to max. 10 µsec. The CDS operation yields in a high sensitivity combined with a low noise: This presentation will focus on the development of a 20 µm pitch 320*256 device, with the following main characteristics: 20 µV/e-sensitivity and < 60 e-noise. The 4 low-power, differential outputs are enabling to drive an output load of > 30 pF at 40 Msamples/sec each, resulting in a > 1700 Hz frame rate, while at the same time the overall nominal power dissipation is < 200 mW. The ROIC is realized in a 0.35 um technology and the outputs are designed to drive directly a 3.3 V, 1.5 V VCM differential AD convertor. The circuit also supports a NDR operating mode to further reduce the noise of the FPA. A small from factor camera with Cameralink output is built around this FPA.

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Section: Detector Interfacingmentioning

confidence: 99%

Low-noise, fast frame-rate InGaAs 320 x 256 FPA for hyperspectral applications

et al. 2009

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show abstract

“…For SWIR imaging applications In0.53Ga0.47As, grown lattice matched on InP [6] is the preferred material scheme. After the deposition of an antireflective coating on the backside of the wafer, the detector material can be used 'as is", whereas for the Ge detectors the substrate needs to be thinned down to make the detector sensitive.…”

Section: A Fpa Architecturementioning

confidence: 99%

InGaAs detectors and FPA’s for a large span of applications: design and material considerations

Merken

2017

International Conference on Space Optics — ICSO 2014

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Investigations on the nucleation parameters of InGaAs grown on InP during LPE

Cited by 2 publications

References 24 publications

Low-noise, fast frame-rate InGaAs 320 x 256 FPA for hyperspectral applications

Low-noise, fast frame-rate InGaAs 320 x 256 FPA for hyperspectral applications

InGaAs detectors and FPA’s for a large span of applications: design and material considerations

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