Investigations on the origin of ferromagnetism in Ga 1−x Cr x N and Si-doped Ga 1−x Cr x N films: Experiments and theory

Zhou, Zhongpo; Wang, Haiying; Yang, Zongxian; Ai, Zhiwei; Guo, Liping; Liu, Chang

doi:10.1016/j.jallcom.2015.11.008

Cited by 2 publications

(2 citation statements)

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“…GaCrN, is another TM doped DMS that showed RT ferromagnetism of 15 emu/cm 3 and 2.26 μ B per Cr atom, grown using radio-frequency plasma-assisted MBE on sapphire substrates. 83 On doping the samples with Si, crystal quality was improved and magnetization was reduced. Long-range mediation between Cr, Si and V Ga is considered responsible for this behavior.…”

Section: The Iii-nitrides For Magnetic Applicationsmentioning

confidence: 99%

Review—The Current and Emerging Applications of the III-Nitrides

Zhou

Ghods

Saravade

et al. 2017

ECS J. Solid State Sci. Technol.

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III-Nitrides are attracting considerable attention as promising materials for a wide variety of applications due to their wide coverage of direct bandgap range, high electron mobility, high thermal stability and many other exceptional properties. The light-emitting diodes based on III-Nitrides revolutionize the solid-state lighting industry. III-Nitrides based solar cells and thermoelectric generators support the sustainable energy progress, and the III-Nitrides are better alternatives for power and radio frequency (RF) electronics compared with silicon. The doped III-Nitrides' magnetic properties and sensitivity to radiation can contribute to novel spintronic and nuclear detection devices. This paper will review III-nitride material properties and their corresponding applications in LEDs, solar cells, power and radio frequency (RF) electronics, magnetic devices, thermoelectrics and nuclear detection. The typical values of electrical, optical, thermoelectric, magnetic properties are cited, the current state of art investigations are reported, and the future applications are estimated. The III-Nitrides, typically composed of GaN and its alloys with Al and In, are compound semiconductor materials with superior properties and well developed growth techniques 1 that has enabled their use in a board range of applications. The III-Nitrides have a hexagonal wurtzite structure and a continuous alloy system with tunable direct bandgaps from 6.2 eV (AlN) through 3.4 eV (GaN) to 0.7 eV (InN) 2 ( Figure 1). This wide coverage of direct bandgap range from deepultraviolet (UV) to infrared region promises a variety of applications in optoelectronics, such as light-emitting diodes (LEDs), lasers, photodetectors and solar cells. GaN is recognized with high breakdown field, high thermal conductivity, and high electron mobility, making GaN an excellent candidate for high power and RF electronic devices. III-Nitrides exhibit high Seebeck coefficient and excellent temperature stability for high temperature thermoelectric applications. Doped GaN exhibit other unique properties with associated applications; such as transition and rare-earth metals doped GaN with magnetic properties, and indium (In)/gadolinium (Gd)/boron (B)/and lithium (Li) doped GaN for nuclear detection. The ability to access such a wide spectral region and these numerous applications has traditionally required the use of many different III-V materials and complex device structures before the advent of the III-Nitrides. [3][4][5][6][7][8][9] This paper will review various applications of III-Nitrides in including LEDs, solar cells, power and RF electronics, magnetic properties, thermoelectrics and nuclear detection applications, along with their development history, current state of art and future explorations. The III-Nitrides for Light-Emitting DiodesLight-Emitting Diodes are a type of solid state lighting (SSL) source with compact size, high energy efficiency and long lifetime. High brightness LEDs have various application in traffic lights, automobile brake ligh...

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Section: The Iii-nitrides For Magnetic Applicationsmentioning

confidence: 99%

Review—The Current and Emerging Applications of the III-Nitrides

Zhou

Ghods

Saravade

et al. 2017

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Moment of 2.18 µ B /atom was observed for samples with Fe layers with thickness over 5 nm, measured using SQUID, vibrating sample magnetometer (VSM) and polarized neutron reflectometry. GaCrN, is another TM doped DMS that showed RT ferromagnetism of 15 emu/cm 3 and 2.26 µ B per Cr atom, grown using radio-frequency plasma-assisted MBE on sapphire substrates (80). On doping the samples with Si, crystal quality was improved and magnetization was reduced.…”

Section: The Iii-nitrides For Magnetic Applicationsmentioning

confidence: 99%

(Invited) The III-Nitrides as a Universal Compound Semiconductor Material: A Review

Zhou¹,

Ghods²,

Saravade³

et al. 2017

ECS Trans.

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III-nitrides are attracting considerable attention as promising materials for a wide variety of applications due to their wide coverage of direct bandgap range, high electron mobility, high thermal stability and many other exceptional properties. The lightemitting diodes based on III-nitrides revolutionize the solid-state lighting industry. III-nitrides based solar cells and thermoelectric generators support the sustainable energy progress, and the IIInitrides are better alternatives for power and radio frequency (RF) electronics compared with silicon. The doped III-nitrides' magnetic properties and sensitivity to radiation can contribute to novel spintronic and nuclear detection devices. This paper will review III-nitride material properties and their corresponding applications in LEDs, solar cells, power and radio frequency (RF) electronics, magnetic devices, thermoelectrics and nuclear detection. The typical values of electrical, optical, thermoelectric, magnetic properties are cited, the current state of art investigations are reported, and the future applications are estimated.

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Investigations on the origin of ferromagnetism in Ga 1−x Cr x N and Si-doped Ga 1−x Cr x N films: Experiments and theory

Cited by 2 publications

References 44 publications

Review—The Current and Emerging Applications of the III-Nitrides

Review—The Current and Emerging Applications of the III-Nitrides

(Invited) The III-Nitrides as a Universal Compound Semiconductor Material: A Review

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