2022
DOI: 10.1149/10906.0145ecst
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(Invited, Digital Presentation) Heterogeneous IGZO/Si CFET Monolithic 3D Integration

Abstract: System-on-panel and monolithic 3D integration must be the main trend in the future. Heterogeneous channel materials need to be integrated on a chip for the different requirements. In the previous work, we innovated an advanced process to combine double gate IGZO high-frequency device and dual work function gate heterogeneous IGZO/Si CFET inverter/SRAM on a substrate. However, the heterogeneous CFET architecture is pretty complicated. Subsequently, the channel design, gate structure, and operation mode for both… Show more

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