(Invited) Failure Mechanisms in AlGaN/GaN HEMTs Irradiated with 2MeV Protons

Anderson, Travis J.; Koehler, Andrew D.; Specht, P.; Weaver, Brad; Greenlee, Jordan D.; Tadjer, Marko J.; Hite, Jennifer K.; Mastro, Michael A.; Porter, Matthew; Wade, Michael; Luysberg, M.; Hobart, Karl D.; Weatherford, T.R.; Kub, Fritz J.

doi:10.1149/06601.0015ecst

Cited by 5 publications

(2 citation statements)

References 6 publications

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“…Especially, studies on the irradiation effects of protons occupying the majority of low earth orbits (LEO) were carried out [5,6,7]. In general, AlGaN/GaN HFETs irradiated with protons exhibit a positive shift in the threshold voltage ( V th ) and a reduction in the drain current ( I DS ), which can be attributed to the displacement damage near the two-dimensional electron gas (2-DEG) [8,9]. Exceptionally, the improvement of carrier concentration also has been reported at a relatively low dose [10].…”

Section: Introductionmentioning

confidence: 99%

Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors

Keum

Kim

2019

Micromachines

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In this work, we investigated the time-dependent dielectric breakdown (TDDB) characteristics of normally-off AlGaN/GaN gate-recessed metal–insulator–semiconductor (MIS) heterostructure field effect transistors (HFETs) submitted to proton irradiation. TDDB characteristics of normally-off AlGaN/GaN gate-recessed MISHFETs exhibited a gate voltage (VGS) dependence as expected and showed negligible degradation even after proton irradiation. However, a capture emission time (CET) map and cathodoluminescence (CL) measurements revealed that the MIS structure was degraded with increasing trap states. A technology computer aided design (TCAD) simulation indicated the decrease of the vertical field beneath the gate due to the increase of the trap concentration. Negligible degradation of TDDB can be attributed to this mitigation of the vertical field by proton irradiation.

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Section: Introductionmentioning

confidence: 99%

Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors

Keum

Kim

2019

Micromachines

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“…2,[4][5][6] It has been shown that AlGaN/GaN HEMTs have minimal changes in resistance, mobility, and device performance with MeV scale proton fluences of 5E13 H + /cm 2 while larger fluences (1E14 H + /cm 2 ) can create charge traps, which reduce the electron mobility and increase the carrier concentration. [7][8][9] Several studies have shown that AlGaN/GaN HEMTs are highly sensitive to their substrates and passivation layers. In particular, it has been shown that switching to a AlN-passivated layer improves transistor performance, 10 while switching to a GaN substrate reduces threading dislocation densities by 4 orders of magnitude.…”

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confidence: 99%

Effect of Surface Passivation and Substrate on Proton Irradiated AlGaN/GaN HEMT Transport Properties

Gallagher

Anderson

Koehler

et al. 2017

ECS J. Solid State Sci. Technol.

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In this work, we fabricate Van der Pauw structures on AlGaN/GaN high electron mobility transistors (HEMTs) with both SiN and AlN passivation layers and both SiC and GaN substrates to study temperature dependent electron transport properties of 2 dimensional electron gases (2DEG) in as-fabricated and proton irradiated devices. We confirm that using a GaN substrate or AlN passivation layer enhances the mobility particularly at low temperatures, though this enhancement is greatly reduced upon irradiating the samples with high proton fluences. Our results suggest that the sheet density may be affected by Al diffusion in the sample creating electron donating impurities, which freeze out around 200 K and are more prominent in AlN passivated samples and minimized by using a GaN over a SiC substrate. Additionally, we show that a large dose of radiation forms traps in the AlGaN layer, which drop the sheet density at high proton fluences. GaN, among other wide bandgap semiconductors, is of considerable interest for next-generation energy efficient, high performance devices because their high electron mobility and high breakdown voltage allows them to operate at higher voltages, frequencies, and temperatures than current Si-or GaAs-based devices. One application is the production of AlGaN/GaN high electron mobility transistors (HEMTs) for microwave power amplifiers, making the study of these devices robustness in high energy proton radiation important for potential space applications.

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Ionizing radiation defects and reliability of Gallium Nitride-based III-V semiconductor devices: A comprehensive review

Sandeep,

Pravin,

Kumar

2024

Microelectronics Reliability

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(Invited) Failure Mechanisms in AlGaN/GaN HEMTs Irradiated with 2MeV Protons

Cited by 5 publications

References 6 publications

Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors

Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors

Effect of Surface Passivation and Substrate on Proton Irradiated AlGaN/GaN HEMT Transport Properties

Ionizing radiation defects and reliability of Gallium Nitride-based III-V semiconductor devices: A comprehensive review

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