(Invited) First-Principles Investigation of High-k Dielectrics for Nonvolatile Memories

Pourtois, Geoffrey; Sankaran, Kiroubanand; Radu, Iuliana; Degraeve, R.; Zahid, Mohammed; Elshocht, Sven Van; Adelmann, Christoph; Gendt, Stefan De; Heyns, Marc; Wouters, Dirk J.; Kittl, J. A.; Jurczak, M.; Rignanese, Gian‐Marco; Houdt, J. Van

doi:10.1149/1.3481628

Cited by 3 publications

(1 citation statement)

References 31 publications

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“…Additionally, κ ∞ is related to the refractive index of the material (i.e., κ ∞ = n 2 ), [ 62 ] and κ ion is associated with the phonon density of states (i.e., oxygen vacancies). [ 63 ] Hence, the equivalent dielectric constants of the Gd x O y and Al x O y dielectric layers changed with the distribution of oxygen vacancies in the dielectric films. Cockayne proposed that κ ion with different numbers of oxygen vacancies per 64 oxygen atoms can be used for FP electronic calculations, [ 64 ] as presented in the simulation results of Figure 3e,f, which were consistent with the PARs of the non‐lattice oxygen obtained in the XPS analyses.…”

Section: Resultsmentioning

confidence: 99%

Polarity‐Differentiated Dielectric Materials in Monolayer Graphene Charge‐Regulated Field‐Effect Transistors for an Artificial Reflex Arc and Pain‐Modulation System of the Spinal Cord

Chan

Jiang

et al. 2022

Advanced Materials

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The nervous system is a vital part of organisms to survive and it endows them with remarkable abilities, such as perception, recognition, regulation, learning, and decision‐making, by intertwining myriad neurons. To realize such outstanding efficacies and functions, many artificial devices and systems have been investigated to emulate the operating principles of the nervous system. Here, an artificial reflex arc (ARA) and artificial pain modulation system (APMS) are proposed to imitate the unconscious behaviors of the spinal cord. GdxOy‐ and AlxOy‐based charge‐regulated field‐effect transistors (CRFETs) with a monolayer graphene channel are fabricated and adopted as inhibitory and excitatory synapses, respectively, under the same pulse signals to mimic the biological reflex arc through a connection with a poly(vinylidene fluoride‐co‐trifluoroethylene)‐based actuator. Additionally, a memristor is integrated with a CRFET as the interneuron to regulate the Dirac point by controlling the voltage drop on the graphene channel, analogous to the descending pain‐inhibition system in the spinal cord, to prevent excessive pain perception. The proposed ARA and APMS provide a significant step forward to realizing the functions of the nervous system, giving promising potential for developing future intelligent alarm systems, neuroprosthetics, and neurorobotics.

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Section: Resultsmentioning

confidence: 99%

Polarity‐Differentiated Dielectric Materials in Monolayer Graphene Charge‐Regulated Field‐Effect Transistors for an Artificial Reflex Arc and Pain‐Modulation System of the Spinal Cord

Chan

Jiang

et al. 2022

Advanced Materials

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Predictions of bandgap and subbands of γ−Al2O3 in presence of intrinsic point defects by DFT+TB-mBJ

Yazdanmehr

Jalali-Asadabadi

Nematollahi

et al. 2019

Computational Condensed Matter

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Impact of precursor chemistry on atomic layer deposition of lutetium aluminates

Nyns

Shi

Tielens

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Physical and electrical characterizations of ultrathin Si-rich Hf-silicate film and Hf-silicate/ Si O 2 bilayer deposited by atomic layer chemical vapor deposition Rare earth-based oxides are of interest for their potential application in future logic highperformance technologies where Germanium is the channel material. In addition, their aluminates are considered as promising high-k dielectrics for nonvolatile memory technologies. However, it has been found that the dielectric quality of these materials is highly dependent on the method of preparation. The authors have therefore examined the atomic layer deposition (ALD) of Lu x Al 2Àx O 3 layers by means of Tris(isopropyl cyclopentadienyl) Lutetium (Lu( i PrCp) 3 ), Tris(diethyl-amido)aluminum and H 2 O or O 3 in a nanolaminate approach. This manuscript covers the impact of the oxidizer on both the ALD process characteristics and Lu x Al 2Àx O 3 layer properties. Because of the hygroscopic nature of rare earth oxides, the O 3 -based ALD of Lu x Al 2Àx O 3 is well controlled compared to the H 2 O-based process. On the other hand, Lu x Al 2Àx O 3 dielectrics grown with H 2 O as the oxidizer show better electrical properties in terms of Equivalent Oxide Thickness (EOT) and leakage current density because of lower C impurities, especially in case of Lu-rich compositions.

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(Invited) First-Principles Investigation of High-k Dielectrics for Nonvolatile Memories

Cited by 3 publications

References 31 publications

Polarity‐Differentiated Dielectric Materials in Monolayer Graphene Charge‐Regulated Field‐Effect Transistors for an Artificial Reflex Arc and Pain‐Modulation System of the Spinal Cord

Polarity‐Differentiated Dielectric Materials in Monolayer Graphene Charge‐Regulated Field‐Effect Transistors for an Artificial Reflex Arc and Pain‐Modulation System of the Spinal Cord

Predictions of bandgap and subbands of γ−Al2O3 in presence of intrinsic point defects by DFT+TB-mBJ

Impact of precursor chemistry on atomic layer deposition of lutetium aluminates

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