(Invited) GOI Substrates: Fabrication and Characterization

Abstract

Wafer bonding is an attractive process to creat new structures and materials, alternative to conventional bulk-Si substrates, in the form of substrates for the advanced metal-oxide-semiconductor field effect transistors (MOSFETs). A germanium on insulator (GOI) substrate attracts much attention because it makes the best use of the higher carrier mobility advantages compared with Si, and is suitable to further downscaling of Ge MOSFET dimensions. However, careful consideration is given especially to the bonded interface between Ge and buried oxide, which should have a device grade quality. In this work, we fabricate GOI substrates by using a wafer bonding method. Atomic structures, chemistry, and electrical properties of the Ge/BOX interface are also characterized.

Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon

“…Wafer bonding provides a very high quality GOI, but the GOI cannot be monolithically integrated with Si substrate and the process cost is expensive [13][14][15][16]. Rapid melt growth (RMG) is an alternative approach, but due to the high melting temperature of Ge, the process is limited by the thermal budget and controlling Si diffusion into Ge is problematic [17][18][19][20].…”