(Invited) Oxygen Precipitation and Defect Generation in Cz Silicon during Second and Millisecond Annealing

Abstract

The precipitation of oxygen was investigated after rapid thermal annealing pre-treatments for 30 s in the range 1100-1250 °C and after flash lamp annealing for 3 ms and 20 ms with different irradiances up to melting of the wafer surface. It was found that the difference between thermal processing on the second and on the millisecond scales is based on the temperature profiles generated by the different types of processing. These profiles influence the shrinking of grown-in oxide precipitate nuclei and the generation, diffusion, and annihilation of intrinsic point defects. It was further found that pre-existing dislocations propagate into the wafer during flash anneals. The dislocation propagation can be well described by a three-dimensional mechanical model.