(Invited) Recent Progress in Wide-Bandgap Semiconductor Devices for a More Electric Future

Kizilyalli, I.C.; Spahn, Olga B.; Carlson, E.P.

doi:10.1149/10908.0003ecst

Cited by 9 publications

(1 citation statement)

References 9 publications

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“…The output signals, as exhibited in Figure b–e, for 50 Hz, 100 Hz, 500 Hz, and 1 kHz, were captured at 293 K environment by an oscilloscope (Tektronix MDO34). The obvious elongated recovery time of the photocurrent is known as the persistent photoconductivity (PPC) effect, which is mostly attributed to the numerous defect-induced trap states in the device. , This universally observed PPC effect severely limits the response speed in GaN-based optoelectronic devices. − It has been reported that elevated temperatures can accelerate atom migration and therefore promote carrier collection to suppress the PPC effect. ,,, However, it brings drawbacks as an additional heating unit with extra power consumption is required. Fortunately, in this work, arising from the narrow fin width, the drift length of the photocarriers is shortened, and carriers can reach high velocity at a low bias voltage.…”

Section: Resultsmentioning

confidence: 99%

100 mV Ultra-Low Bias AlGaN/GaN Photodetector Based on Fin-Shaped Capacitor Configuration for Future Integrated Optoelectronics

Liang

2023

ACS Photonics

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This study presents an AlGaN/GaN ultraviolet (UV) photodetector proven to be highly effective when working under an ultra-low bias voltage. The proposed photodetector is based on an innovative configuration consisting of repetitive AlGaN/GaN fin-shaped capacitor units, which make use of the two-dimensional electron gas (2DEG) layer as the positive field plates and the sidewall tungsten Schottky metal as the ground plates to surround the bulk of photocarrier generation space. Furthermore, a unique partial sidewall oxide structure is fabricated to partition the 2DEG field plates from the ground plates and to enable proper depletion field formation. With the special structure design, the symmetrical three-dimensional depletion fields are formed within each fin-shaped capacitor unit to spatially pinch off the entire bulk region at an ultra-low bias voltage. Effective photocarrier collection can then be achieved by such an extensive field coverage. When biased at 100 mV, intriguing performances in response to 365 nm UV were demonstrated by the fabricated prototype, such as a photocurrent-to-dark-current-ratio of 7.0 × 104, a peak responsivity of 1.1 × 103 A/W, as well as a large detectivity of 1.1 × 1016 Jones. Good transient performance was also observed under 365 nm UV pulses of 0.7 mW/cm2 in intensity with an operating frequency of up to 1 kHz. This work embodies an ultra-low voltage UV photodetector on the AlGaN/GaN epitaxy heterojunction platform with concise and complementary metal-oxide-semiconductor (CMOS)-compatible fabrication procedures, opening up an appealing potential in ultra-low-power optoelectronic integrated circuits for future Internet of Things and edge computing applications.

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Section: Resultsmentioning

confidence: 99%

100 mV Ultra-Low Bias AlGaN/GaN Photodetector Based on Fin-Shaped Capacitor Configuration for Future Integrated Optoelectronics

Liang

2023

ACS Photonics

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Investigation of WBG based Power Converters used in E-Transportation

Prasad Bhupathi,

Bobba,

Niharika

et al. 2024

E3S Web Conf.

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Nowadays, Uses for transportation are evolving in the direction of getting more electrified due to rising fuel costs and environmentally hazardous pollutants due to which The grid’s need for power is increasing dramatically. As the only solution for this is to diminish the power consumption of Electric Vehicles (EV). Enhanced component efficiency can lead to improved electric vehicle performance. Wide band gap (WBG) semiconductors, in particular silicon carbide (SiC) and Gallium Nitride (GaN), are ideal candidates of choice to address the recent growing demand in both high efficiency and great power density converters about electric vehicles. Due to their the capacity to switch at a high frequency, high temperature, high voltage, reduced size and reduced conduction losses makes them superior than Si semi-conductors. WBG devices have some properties which include rapid electron mobility, high breakdown field, and big band gap low on-state resistance and capacitance, lower co-efficient of thermal expansion (CTE) and high stability. This paper includes a study on WBG devices, their properties, and the increased efficiency of power converters i.e DC-DC boost converter and single-phase full bridge inverter using LTSpice simulation tool.

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Toward achieving cost-effective hexagonal BN semi-bulk crystals and BN neutron detectors via halide vapor phase epitaxy

Hossain

et al. 2023

Applied Physics Letters

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Presently, thermal neutron detectors fabricated from boron-10 enriched hexagonal boron nitride (h-10BN) ultrawide bandgap semiconductor grown by metal organic chemical vapor deposition (MOCVD) hold the record high detection efficiency among all solid-state detectors at 59%. To overcome the short comings of MOCVD growth, including inherently low growth rate and unavoidable impurities such as carbon in metal organic source, we demonstrate here the growth of natural hexagonal boron nitride (h-BN) semi-bulk wafers using halide vapor phase epitaxy (HVPE), which is an established technique for producing GaN semi-bulk crystals at a high growth rate. Electrical transport characterization results revealed that these HVPE grown materials possess an electrical resistivity of 1 × 1013 Ω cm, and a charge carrier mobility and lifetime product of 2 × 10−4 cm2/V s. Detectors fabricated from a 100 μm thick h-BN wafer have demonstrated a thermal neutron detection efficiency of 20%, corresponding to a charge collection efficiency of ∼60% at an operating voltage of 500 V. This initial demonstration opens the door for mass producing high efficiency h-BN semiconductor neutron detectors at a reduced cost, which could create unprecedented applications in nuclear energy, national security, nuclear waste monitoring and management, the health care industry, and material sciences.

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(Invited) Recent Progress in Wide-Bandgap Semiconductor Devices for a More Electric Future

Cited by 9 publications

References 9 publications

100 mV Ultra-Low Bias AlGaN/GaN Photodetector Based on Fin-Shaped Capacitor Configuration for Future Integrated Optoelectronics

100 mV Ultra-Low Bias AlGaN/GaN Photodetector Based on Fin-Shaped Capacitor Configuration for Future Integrated Optoelectronics

Investigation of WBG based Power Converters used in E-Transportation

Toward achieving cost-effective hexagonal BN semi-bulk crystals and BN neutron detectors via halide vapor phase epitaxy

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