Invited Review: Superlattice and multiquantum well avalanche photodetectors: physics, concepts and performance

Brennan, Kevin F.; Haralson, Joe Nathan

doi:10.1006/spmi.2000.0891

Cited by 21 publications

(5 citation statements)

References 131 publications

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“…pure nanomaterials and/or doped-and hereto-nanostructures. Up to now, there have been many original and review articles devoted to nanostructured materials and set-ups used in photodetectors, these include quantum-dots, [44][45][46][47] quantum-well, [48][49][50][51] 1D nanostructures, [52][53][54][55] Ge-on-Si, 56 ZnO, 57 organic thin-film, 58 Si, 59 lnP, 60 wide-bandgap semiconductors for ultraviolet light detection, 61 gaseous 62 and other kinds. [63][64][65][66][67] However, there have been a very few comprehensive reviews focusing on a variety of solutionprocessed techniques used for inorganic nanofilm photodetector fabrication.…”

Section: Introductionmentioning

confidence: 99%

Recent advances in solution-processed inorganic nanofilm photodetectors

et al. 2014

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As important opto-electronical devices, nanofilm photodetectors constructed from inorganic low-dimensional nanostructures have drawn prime attention due to their significance in basic scientific research and potential technological applications. This review highlights a selection of important topics pertinent to inorganic nanofilm photodetectors processed via solution strategies. This article begins with a description of the advantages and drawbacks of nanofilm-based photodetectors versus 1D nanostructure-based ones, and then introduces rational design and controlled syntheses of various nanofilms via different wet-chemical routes, and then mainly focuses on their optoelectronic properties and applications in photodetectors based on the different types of nanofilms. Finally, the general challenges and the potential future directions of this exciting research and technology area are presented.

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Section: Introductionmentioning

confidence: 99%

Recent advances in solution-processed inorganic nanofilm photodetectors

et al. 2014

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“…1(a)) consisting of periodic stacks of two dissimilar materials with layer thicknesses of a few nanometers. SL structures have been explored extensively in the field of photonics, electronics and thermoelectronics 21,22 . In the area of spintronics, few studies 18,23 have explored SL structures made of alternate layers of an insulator and normal metal (NM) sandwiched between the two FMs as a route to enhance the TMR.…”

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confidence: 99%

Band-pass Fabry-Pèrot magnetic tunnel junctions

Sharma

Tulapurkar

Muralidharan

2018

Applied Physics Letters

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We propose a high-performance magnetic tunnel junction by making electronic analogs of optical phenomena such as anti-reflections and Fabry-Pèrot resonances. The devices we propose feature anti-reflection enabled superlattice heterostructures sandwiched between the fixed and the free ferromagnets of the magnetic tunnel junction structure. Our predictions are based on the non-equilibrium Green's function spin transport formalism coupled selfconsistently with the Landau-Lifshitz-Gilbert-Slonczewski equation. Owing to the physics of bandpass spin filtering in the bandpass superlattice magnetic tunnel junction device, we demonstrate an ultra-high boost in the tunnel magneto-resistance (TMR≈ 5 × 10 4 %) and nearly 92% suppression of spin transfer torque switching bias in comparison to a traditional trilayer magnetic tunnel junction device. The proof of concepts presented here can lead to next-generation spintronics device design harvesting the rich physics of superlattice heterostructures and exploiting spintronic analogs of optical phenomena.Spintronics involves the manipulation of the intrinsic spin along with the charge of electrons and has emerged as an active area of research with direct engineering applications for next-generation logic and memories. A hallmark device that leads the development of the technology is the trilayer magnetic tunnel junction (MTJ), which consists of two ferromagnets (FM) separated by an insulator such as MgO 1,2 . The MTJ structure has attracted a lot of attention due to the possibility of engineering a large tunnel magneto-resistance (TMR ≈ 200%) 3 and the current driven magnetization switching via the spintransfer torque (STT) effect 4-7 . Trilayer MTJs find their potential applications in magnetic field sensors 8,9 , STTmagnetic random access memories 10 and spin torque nano-oscillators (STNO) 11,12 . The MTJ performance for the aforesaid applications relies on large device TMR and low switching bias 9,12,13 . There have been consistent efforts in terms of materials development 14-16 and the device structure designs 17-19 to enhance the TMR and STT in magnetic tunnel junctions. When it comes to device structures, the double barrier MTJ has been extensively explored both theoretically and experimentally to achieve better TMR and switching characteristics 19,20 . Owing to the physics of resonant tunneling, the double barrier structure has been predicted to provide a high TMR ( ≈ 2500%) 9,12 and nearly 44% lower switching bias 19 in comparison with the trilayer MTJ device.The Fabry-Pèrot resonances in the electronic analog are realized by superlattice (SL) structures ( Fig. 1(a)) consisting of periodic stacks of two dissimilar materials with layer thicknesses of a few nanometers. SL structures have been explored extensively in the field of photonics, electronics and thermoelectronics 21,22 . In the area of spintronics, few studies 18,23 have explored SL structures made of alternate layers of an insulator and normal metal (NM) sandwiched between the two FMs as a route to enhance the TM...

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“…This mechanism is well known in semiconductor physics and exploited to tailor the electronic and optical properties of hetero-junctions and multilayers [1]. Strained hetero-structures are widely used as active components in several types of devices, such as quantum well (QW) lasers [2], field effect transistors [3], light emitting diodes [4] and photo-detectors [5]. The scenario is different for thin metal films.…”

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confidence: 99%

Electronic states of moiré modulated Cu films

Moras

Sheverdyaeva

Carbone

et al. 2012

J. Phys.: Condens. Matter

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We examined by low-energy electron diffraction and scanning tunneling microscopy the surface of thin Cu films on Pt(111). The Cu/Pt lattice mismatch induces a moiré modulation for films from 3 to about 10 ML thickness. We used angle-resolved photoemission spectroscopy to examine the effects of this structural modulation on the electronic states of the system. A series of hexagonal-and trigonal-like constant energy contours is found in the proximity of the Cu(111) zone boundaries. These electronic patterns are generated by Cu sp-quantum well state replicas, originating from multiple points of the reciprocal lattice associated with the moiré superstructure. Layer-dependent strain relaxation and hybridization with the substrate bands concur to determine the dispersion and energy position of the Cu Shockley surface state.

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Invited Review: Superlattice and multiquantum well avalanche photodetectors: physics, concepts and performance

Cited by 21 publications

References 131 publications

Recent advances in solution-processed inorganic nanofilm photodetectors

Recent advances in solution-processed inorganic nanofilm photodetectors

Band-pass Fabry-Pèrot magnetic tunnel junctions

Electronic states of moiré modulated Cu films

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