(Invited) Study on Charge Storage and Optical Response of Hybrid Nanodots Floating Gate MOS Devices for Their Optoelectronic Application

Abstract

We have designed and fabricated hybrid nanodots structures, in which Si quantum dots (QDs) and either Ni-silicide or Pt-silicide nanodots (NDs) are stacked with ultrathin SiO 2 interlayer, as a novel functional floating gate (FG) to satisfy both multiple valued capability and large capacity on charge storage. Multiple-step charge injection to silicide NDs through discrete energy states in Si-QDs and stable storage of many charges in deep potential wells in silicide NDs have been confirmed from electrical characteristics of MOS capacitors and transistors measured at room temperature. A unique optical response of the hybrid NDs FG to near-infrared light irradiation, which is caused by the transfer of photo-excited electrons from silicide NDs to Si-QDs, has also been demonstrated.

Nano spin-diodes using FePt-NDs with huge on/off current ratio at room temperature

“…Metallic NDs have received much attention because of their potential application to charge storage devices 24 25 26 27 28 29 30 31 32 33 34 . The charging and discharging characteristics of metallic NDs through an ultrathin oxide layer depend on their electrostatic potential.…”