(Invited) The Pseudo-MOSFET: Principles and Recent Trends

Cristoloveanu, S.; Ionica, I.; Diab, A.; Liu, Fanyu

doi:10.1149/05005.0249ecst

Cited by 14 publications

(9 citation statements)

References 18 publications

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“…The maximum mobility values for electrons and holes of SIS structures with the ferroelectric hysteresis were determined for pseudo-MOSFETs by the Y-function method according to the following formula [ 36 ]: μ n,p = (β n,p ) 2 /(f n C BOX V DS ), where β n,p are the slopes of Y-function branches, f n = f p = 0.75 or 5.3 is the geometric factor for two-probe measurements, or in Corbino geometry, respectively, C BOX is the buried oxide (BOX) capacity C BOX = ε 0 ·ε BOX /t BOX (dielectric constant ε BOX ~20), V DS = 0.1 V is the drain voltage.…”

Section: Discussionmentioning

confidence: 99%

Diode-Like Current Leakage and Ferroelectric Switching in Silicon SIS Structures with Hafnia-Alumina Nanolaminates

et al. 2021

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Silicon semiconductor-insulator-semiconductor (SIS) structures with high-k dielectrics are a promising new material for photonic and CMOS integrations. The “diode-like” currents through the symmetric atomic layer deposited (ALD) HfO2/Al2O3/HfO2… nanolayers with a highest rectification coefficient 103 are observed and explained by the asymmetry of the upper and lower heterointerfaces formed by bonding and ALD processes. As a result, different spatial charge regions (SCRs) are formed on both insulator sides. The lowest leakages are observed through the stacks, with total Al2O3 thickness values of 8–10 nm, which also provide a diffusive barrier for hydrogen. The dominant mechanism of electron transport through the built-in insulator at the weak field E < 1 MV/cm is thermionic emission. The Poole-Frenkel (PF) mechanism of emission from traps dominates at larger E values. The charge carriers mobility 100–120 cm2/(V s) and interface states (IFS) density 1.2 × 1011 cm−2 are obtained for the n-p SIS structures with insulator HfO2:Al2O3 (10:1) after rapid thermal annealing (RTA) at 800 °C. The drain current hysteresis of pseudo-metal-oxide-semiconductor field effect transistor (MOSFET) with the memory window 1.2–1.3 V at the gate voltage |Vg| < ±2.5 V is maintained in the RTA treatment at T = 800–900 °C for these transistors.

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Section: Discussionmentioning

confidence: 99%

Diode-Like Current Leakage and Ferroelectric Switching in Silicon SIS Structures with Hafnia-Alumina Nanolaminates

et al. 2021

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“…На вставке к рис. 2, a граница сращивания имеет конечную толщину ∼ 1.5 нм и, возможно, состоит из оксида кремния и алюмосиликатов [13][14][15]. Для проверки этого предположения методом EDS были измерены карты и профили распределения O, Al, Si в поперечных сечениях образцов после отжига при 1100 • С, из которых видно, что содержание кислорода в сапфире у гетерограницы уменьшается, а в кремнии растет (рис.…”

Section: результаты и обсуждениеunclassified

“…Измерение транспортных свойств носителей заряда проводилось с помощью псевдо-МОП-транзисторов с медным полевым затвором со стороны подложки сапфира [13]. Для сравнения на нижней вставке рис.…”

Section: результаты и обсуждениеunclassified

Положительный Заряд В Кнс-Гетероструктурах С Межслойным Оксидом Кремния

Попов¹,

Антонов²,

Вдовин³

2018

Физика И Техника Полупроводников

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The continuous transfer of (001)Si layers 0.2–1.7 μm thick by implanted hydrogen to the c -sapphire surface during direct bonding at high temperatures of 300–500°C is demonstrated for the first time. The formation of an intermediate silicon-oxide layer SiO_ x during subsequent heat treatments at 800–1100°C, whose increase in thickness (up to 3 nm) correlates with an increase in the positive charge Q _ i at the heterointerface to ~1.5 × 10^12 cm^–2 in contrast to the negative charge at the SiO_ x /Al_2O_3 ALD heterointerface. During silicon-layer transfer to sapphire with a thermal silicon-dioxide layer, Q _ i decreases by more than an order of magnitude to 5 × 10^10 cm^–2 with an increase in the SiO_2 thickness from 50 to 400 nm, while the electron and hole mobilities barely differ from the values in bulk silicon. Based on these results, a qualitative model of the formation of positively charged oxygen vacancies in a 5-nm sapphire layer near the bonding interface is proposed.

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“…We have modeled the tandem solar cell using TCAD numerical simulation tools [16], which solve the Poisson, electroneutrality and transport equations (Drift Diffusion) self-consistently on a 2D mesh. Band structure, electrical transport and recombination parameters for III-V materials and amorphous and crystalline silicon were chosen in agreement with literature values [17][18][19][20][21][22] and are composition and doping dependent. To simulate the current density versus voltage characteristics, J(V), under AM1.5 g spectrum, realistic photogeneration profiles have been calculated through the entire structure, neglecting optical shading due to metal contacts and using the optical indexes of the various layers as inputs.…”

Section: Modeling Strategymentioning

confidence: 99%

“…Compilation of typical material parameters for epi-Si and epi-SiGe from Si and SiGe databases [17] for common parameters and from [21] for epi-Si electron and hole mobility (also used in [22] Table 4 Fitting parameters used in our models to reproduce experimental data in Fig. 3(b).…”

Section: Tablementioning

confidence: 99%

Detailed analysis of III-V/epi-SiGe tandem solar cell performance including light trapping schemes

Lachaume

Hamon

Décobert

et al. 2017

Solar Energy Materials and Solar Cells

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International audienceRecent developments have unlocked the main issues arising from the combination of III-V and silicon and have opened a new way to fabricate tandem solar cells. In this study we provide a detailed analysis of III-V/epi-SiGe tandem devices performance using opto-electrical models and parameters acquired from previous experimental realizations of single junction devices. At first, we present the validation of our top and bottom cells models by comparison with previously published solar cells. The analysis of the current matching and the impact of the Al content in AlGaAs absorber on the open circuit voltage is performed on a very wide range of thickness and Al content. The optimal configurations for tandems with thin film absorbers are found with an empirical expression. This expression relates the required bottom absorber thickness to the Al content for current matching in a flat tandem device. Low-temperature epitaxial SiGe growth on III-V materials is an inverted growth technique, meaning that the last material grown is the Si(Ge) bottom cell. We can thus easily texture the back of the bottom cell for higher photon absorption. The proposed nanostructurization of the back reflector shows that, to reach the same efficiency, only half of the thickness is required if a 2D grating is combined with a silver reflector. The detailed influence of the bulk and interface electrical quality in the epi-SiGe bottom cell is also assessed. Finally, the prediction of the tandem device performance according to different realistic scenarios is presented

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(Invited) The Pseudo-MOSFET: Principles and Recent Trends

Cited by 14 publications

References 18 publications

Diode-Like Current Leakage and Ferroelectric Switching in Silicon SIS Structures with Hafnia-Alumina Nanolaminates

Diode-Like Current Leakage and Ferroelectric Switching in Silicon SIS Structures with Hafnia-Alumina Nanolaminates

Положительный Заряд В Кнс-Гетероструктурах С Межслойным Оксидом Кремния

Detailed analysis of III-V/epi-SiGe tandem solar cell performance including light trapping schemes

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