(Invited) Toward the Reduction of Performance-Limiting Defects in SiC Epitaxial Substrates

Ohtani, Noboru

doi:10.1149/1.3631502

Cited by 8 publications

(6 citation statements)

References 17 publications

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“…The depth of these pits is typically 3-20 nm, and the pits are deeper for TSDs than for TEDs. 160) When the pits are created, local electric field crowding occurs, simply because of a geometric effect. 161) Fujiwara et al found that the negative effects of TSDs on the diode characteristics could be eliminated almost entirely by suppressing the formation of dislocation-induced pits.…”

Section: In-grown Stacking Faults and Other Defects In Epitaxial Layersmentioning

confidence: 99%

Material science and device physics in SiC technology for high-voltage power devices

Kimoto

2015

Jpn. J. Appl. Phys.

906

469

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Power semiconductor devices are key components in power conversion systems. Silicon carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable for high-voltage and low-loss power devices. Through recent progress in the crystal growth and process technology of SiC, the production of medium-voltage (600–1700 V) SiC Schottky barrier diodes (SBDs) and power metal–oxide–semiconductor field-effect transistors (MOSFETs) has started. However, basic understanding of the material properties, defect electronics, and the reliability of SiC devices is still poor. In this review paper, the features and present status of SiC power devices are briefly described. Then, several important aspects of the material science and device physics of SiC, such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are reviewed. Fundamental issues regarding SiC SBDs and power MOSFETs are also discussed.

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Section: In-grown Stacking Faults and Other Defects In Epitaxial Layersmentioning

confidence: 99%

Material science and device physics in SiC technology for high-voltage power devices

Kimoto

2015

Jpn. J. Appl. Phys.

906

469

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“…2.3, where the defect engineering is closely linked to the control of carrier lifetimes. Regarding extended defects in SiC epitaxial wafers, several types of dislocations, 176) stacking faults, 177,178) and more macroscopic defects such as polytype inclusions 179) and stacking fault complex (formerly "carrot" or "comet" defects) 180) are present though micropipe defects have been almost eliminated (density: < 0.1 cm −2 ).…”

Section: Research On Sic Bipolar Devicesmentioning

confidence: 99%

Defect engineering in SiC technology for high-voltage power devices

Kimoto

Watanabe

2020

Appl. Phys. Express

204

100

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Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-state loss, and fast switching, compared with those of the Si counterparts. Through recent progress in the material and device technologies of SiC, production of 600–3300 V class SiC unipolar devices such as power metal-oxide-semiconductor field-effect transistors (MOSFETs) and Schottky barrier diodes has started, and the adoption of SiC devices has been demonstrated to greatly reduce power loss in real systems. However, the interface defects and bulk defects in SiC power MOSFETs severely limit the device performance and reliability. In this review, the advantages and present status of SiC devices are introduced and then defect engineering in SiC power devices is presented. In particular, two critical issues, namely defects near the oxide/SiC interface and the expansion of single Shockley-type stacking faults, are discussed. The current physical understanding as well as attempts to reduce these defects and to minimize defect-associated problems are reviewed.

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“…Both TSDs and TEDs may extend from the substrate to the wafer surface and bring about small pit-like surface features [ 15 ], as shown in Fig. 3 b [ 25 ]. Typically, density of TEDs is about 8000–10,000 1/cm 2 , which is almost 10 times larger than that of TSDs.…”

Section: Defects In Sicmentioning

confidence: 99%

Defect Inspection Techniques in SiC

et al. 2022

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With the increasing demand of silicon carbide (SiC) power devices that outperform the silicon-based devices, high cost and low yield of SiC manufacturing process are the most urgent issues yet to be solved. It has been shown that the performance of SiC devices is largely influenced by the presence of so-called killer defects, formed during the process of crystal growth. In parallel to the improvement of the growth techniques for reducing defect density, a post-growth inspection technique capable of identifying and locating defects has become a crucial necessity of the manufacturing process. In this review article, we provide an outlook on SiC defect inspection technologies and the impact of defects on SiC devices. This review also discusses the potential solutions to improve the existing inspection technologies and approaches to reduce the defect density, which are beneficial to mass production of high-quality SiC devices.

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(Invited) Toward the Reduction of Performance-Limiting Defects in SiC Epitaxial Substrates

Cited by 8 publications

References 17 publications

Material science and device physics in SiC technology for high-voltage power devices

Material science and device physics in SiC technology for high-voltage power devices

Defect engineering in SiC technology for high-voltage power devices

Defect Inspection Techniques in SiC

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