InxGa1−xAs/GaAs quantum wire structures grown on GaAs (100) patterned substrates with [001] ridges

Enhancement of optical nonlinearity in strained (InGa)As sidewall quantum wires on patterned GaAs (311)A substrates

“…This suggests a smaller In composition in the wire relative to that in the well, and/or a reduced height compared to the unstrained wires, that is also found for ridge-type structures on patterned GaAs ͑100͒ substrates. 10 Yet, in view of applications, stacking the strained quantum wires in dense arrays will allow the fabrication of optical modulators with high modulation depth operating at low incident power.…”

A comparison between GaAs and AlAs deposition on patterned substrates

“…Heteroepitaxial growth on patterned GaAs substrates has received very little attention, however, especially with respect to AlAs deposition, apart from the use of thin Al(Ga)As marker layers for following the growth front development [6,10,11] and the formation of Al-containing quantum wires [12][13][14][15]. The diffusion length of the group III adatoms increases from Al to Ga [16][17][18][19], therefore a change in the group III species used during growth should have a direct effect on the final ridge structures produced. The use of various diffusion length adspecies leads to additional complexity in the growth processes, since ridge formation utilises inter-planar adatom migration to attain the familiar peaked geometry.…”