High power impulse magnetron sputtering (HIPIMS) is pulsed sputtering where the peak power exceeds the time-averaged power by typically two orders of magnitude. The peak power density, averaged over the target area, can reach or exceed 10 7 W/m 2 , leading to plasma conditions that make ionization of the sputtered atoms very likely. A brief review of HIPIMS operation is given in a tutorial manner, illustrated by some original data related to the selfsputtering of niobium in argon and krypton. Emphasis is put on the current-voltage-time relationships near the threshold of self-sputtering runaway. The great variety of current pulse shapes delivers clues on the very strong gas rarefaction, self-sputtering runaway conditions, and the stopping of runaway due to the evolution of atom ionization and ion return probabilities as the gas plasma is replaced by metal plasma. The discussions are completed by considering instabilities and the special case of "gasless" self-sputtering.
IntroductionDerived from a Plenary Talk at the 2010 Plasma Engineering Conference, this work is limited to a brief recap of sputtering basics followed by considerations of how the magnetron operates under high power pulsed conditions. The emphasis will be on the ionization of sputtered atoms followed by self-sputtering, which may or may not amplify to result in selfsputtering "runaway". The runaway phenomenon will be illustrated by new data related to its onset and the establishment of sustained, steady-state self-sputtering. For simplicity and transparency, and given the finite space, the considerations are mostly phenomenological and limited to non-reactive sputtering using pure argon or krypton.High power impulse magnetron sputtering (HIPIMS) is a relatively young physical vapor deposition (PVD) technology that combines magnetron sputtering with pulsed power technology [1][2][3]. The objective is to achieve ionization of the sputtered atoms in order to have ions available for substrate etching (pre-treatment) [4] and/or for assistance to the film growth process, leading to well-adherent coatings of desirable microstructure and properties [5].In contrast to conventional mid-frequency pulsed sputtering, the power densities during pulse on-time are much higher in HIPIMS. To clearly define the scope, two definitions of HIPIMS are offered here. First, a technical definition could be "HIPIMS is pulsed sputtering where the peak power exceeds the time-averaged power by typically two orders of magnitude." This definition implies that long pauses exist between pulses of very high amplitude, hence the word "impulse" is justified in the terminology. The peak power density, averaged over the target area, often exceeds 10