2020
DOI: 10.1002/aelm.202000238
|View full text |Cite
|
Sign up to set email alerts
|

Ion‐Activated Greatly Enhanced Conductivity of Thin Organic Semiconducting Films in Two‐Terminal Devices

Abstract: The energetics of metal/organic semiconductor (OSC) and polymer electrolyte/OSC interfaces play a key role in the operation of a variety of electronic and optoelectronic devices. Despite extensive research in the field, the way such energetics impact on device properties is often poorly understood and overlooked. They can cause unusual phenomena as reported herein in the case of metal/OSC/electrolyte systems for which an increase of up to three orders of magnitude in the conductivity of thin OSC films is obser… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2023
2023
2023
2023

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
(1 citation statement)
references
References 56 publications
0
1
0
Order By: Relevance
“…The temperature was set to 60 °C and stirred for about 6 hours, and after the polymer P (VDF-HFP) was completely solved, the stirring was stopped to obtain the gel solution. Then the printed semiconductor layer and the substrate after evaporation of the Au electrode are placed behind the patterned screen printing plate and aligned, and then the ionic gel printing is covered to connect the semiconductor layer and the gate electrode to complete the printing, and finally, the device is placed in the vacuum oven at 70 °C for 120 min drying [14] .…”
Section: Printing Of the Gate Dielectric Layer On The Semiconductor L...mentioning
confidence: 99%
“…The temperature was set to 60 °C and stirred for about 6 hours, and after the polymer P (VDF-HFP) was completely solved, the stirring was stopped to obtain the gel solution. Then the printed semiconductor layer and the substrate after evaporation of the Au electrode are placed behind the patterned screen printing plate and aligned, and then the ionic gel printing is covered to connect the semiconductor layer and the gate electrode to complete the printing, and finally, the device is placed in the vacuum oven at 70 °C for 120 min drying [14] .…”
Section: Printing Of the Gate Dielectric Layer On The Semiconductor L...mentioning
confidence: 99%