Ion and radical reactions in the silane glow discharge deposition of a-Si:H films

Turban, G.; Catherine, Y.; Grolleau, B.

doi:10.1007/bf00566858

Cited by 82 publications

(12 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In a DC discharge of silane it is found that the reaction rate for the depletion of silane is a linear function of the DC current in the discharge, which allows to determine a first-order reaction mechanism in electron density and temperature [302,304]. For an RF discharge, similar results are found [303,305]. Also, the depletion and production rates were found to be temperaturedependent [306].…”

Section: Vc1 Analysis Of Neutralsmentioning

confidence: 59%

“…The relative abundance of SiH + 3 ions increases with increasing pressure, while that of SiH + 2 decreases [319]. The ionization cross section of SiH + 2 is higher than that of SiH + 3 [320], but SiH + 2 is lost via the reaction SiH + 2 + SiH 4 → SiH + 3 + SiH 3 [305]. At pressures lower than 0.1 Torr SiH + 2 becomes the dominant ion.…”

Section: Vc3 Analysis Of Ionsmentioning

confidence: 98%

“…Mass-spectrometric research on silane decomposition kinetics has been performed for flowing [298,[302][303][304][305][306] and static discharges [197,307]. In a DC discharge of silane it is found that the reaction rate for the depletion of silane is a linear function of the DC current in the discharge, which allows to determine a first-order reaction mechanism in electron density and temperature [302,304].…”

Section: Vc1 Analysis Of Neutralsmentioning

confidence: 99%

See 2 more Smart Citations

Methods of deposition of hydrogenated amorphous silicon for device applications

Sark

2002

Handbook of Thin Films

View full text Add to dashboard Cite

Section: Vc1 Analysis Of Neutralsmentioning

confidence: 59%

Section: Vc3 Analysis Of Ionsmentioning

confidence: 98%

Section: Vc1 Analysis Of Neutralsmentioning

confidence: 99%

See 1 more Smart Citation

Methods of deposition of hydrogenated amorphous silicon for device applications

Sark

2002

Handbook of Thin Films

View full text Add to dashboard Cite

“…The ionization potentials of hydrogen (15.4 eV), neon (21.6 eV), argon (15.8 eV) and xenon (12.1 eV) are higher than that of silane (11.0 eV) as shown in Table 1 [13]. Therefore, the ion-molecule reactions of H 2 + , Ne + , Ar + or Xe + with silane result in the transfer of electron from silane to the ion [14], which can lead to dissociative ionization of silane. These are known as asymmetric charge exchange reactions resulting in SiH x + (0 rxr3) ions with thermal energy in the neutralizing system.…”

Section: Resultsmentioning

confidence: 97%

Fabrication of nano-crystalline silicon thin film at low temperature by using a neutral beam deposition method

Kang¹,

Jeon²,

Park³

et al. 2010

Journal of Crystal Growth

View full text Add to dashboard Cite

“…Although plasma diagnostic analysis have been performed 7 , for spatial plasma separation technique, no data are yet available. In this paper we shall discuss the results concerning species detected either on the plasma region (Pos 2) or near the growing surface (Pos 3) and their correlation with films properties.…”

Section: (Electron Cyclotron Resonance) Cpm 4 (Controlled Plasmamentioning

confidence: 99%

Plasma Diagnostic of a TCDDC System Using a Quadropole Mass Spectrometer

Vieira

Maçarico²,

Martins

et al. 1989

MRS Proc.

View full text Add to dashboard Cite

Species formed during the decomposition of silane-methane-hydrogen mixtures ([SiH4]x:[CH4]y:[H21z), by spatial plasma separation technique using the TCDDC (Two Consecutive Decomposition and Deposition Chambre) systeml, are evaluated by mass spectrometric analysis and related with the structural and electro-optical properties for either amorphous (a-) or microcrystalline (gc-) thin films. Results obtained show that in the plasma region, the main reaction is the direct fragmentation of Sill 4 by electron impact whilst near the growing surface, the main detected species are excited. The kind of species and their intensity depend strongly on the power density (dp), mixture gas ratio (g = CH 4 /SiH 4 +CH 4 ), static electromagnetic (ý,B) fields and r.f. frequency (f), used. Since CH 4 has a threshold decomposition higher than that one of Sil-4 , the species presented at the plasma region are, mainly, methyl, dimethyl and CH 2 -CH 2 graphitic-like chains depending, mostly, on dp and on g. By diluting the mixture in H 2 , we observe the existence of active H 2 species that, for high dp, may lead to a transition from the amorphous to microcrystalline phase, as well as a carbon incorporation in the amorphous tissue as graphitic-like bonds. This allow us to infer the merit of the TCDDC system in producing a-/4ic-thin films that can be applied to photovoltaic and other applications.

show abstract

Ion and radical reactions in the silane glow discharge deposition of a-Si:H films

Cited by 82 publications

References 37 publications

Methods of deposition of hydrogenated amorphous silicon for device applications

Methods of deposition of hydrogenated amorphous silicon for device applications

Fabrication of nano-crystalline silicon thin film at low temperature by using a neutral beam deposition method

Plasma Diagnostic of a TCDDC System Using a Quadropole Mass Spectrometer

Contact Info

Product

Resources

About