Ion-assisted deposition of CN and SiCN films

He, Zuming; Carter, George; Colligon, J.S.

doi:10.1016/0040-6090(96)08556-2

Cited by 65 publications

(27 citation statements)

References 13 publications

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“…Amorphous SiC is also applied as a passivation layer for crystalline silicon [6] and as a metal diffusion barrier for copper [7]. Various growth techniques have been employed to achieve gaseous reactive species when the substrate temperature is relatively low, including bias-assisted hot filament chemical vapor deposition [8], plasma-enhanced chemical vapor deposition (PECVD) [9,10], pulsed laser deposition [11] and ion beam sputtering [12]. Compared with these techniques, the conventional chemical vapor deposition (CVD) requires higher deposition temperatures.…”

Section: Introductionmentioning

confidence: 99%

Transition between amorphous and crystalline phases of SiC deposited on Si substrate using H3SiCH3

Wang

Dimitrijev

Han

et al. 2009

Journal of Crystal Growth

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a b s t r a c tThis paper presents a study of the transition between amorphous and crystalline phases of SiC films deposited on Si(1 0 0) substrate using H 3 SiCH 3 as a single precursor by a conventional low-pressure chemical vapor deposition method in a hot-wall reactor. The microstructure of SiC, characterized by X-ray diffraction and high-resolution transmission electron microscopy, is found to vary with substrate temperature and H 3 SiCH 3 pressure. The grain size decreases with increasing MS pressure at a given temperature and also decreases with reducing temperature at a given MS pressure. The deposition rates are exponentially dependent on the substrate temperature with the activation energy of around 2.6 eV. The hydrogen compositional concentration in the deposited SiC films, determined by secondary ion mass spectrometry depth profiling, is only 2.9% in the nanocrystalline SiC but more than 10% in the amorphous SiC, decreasing greatly with increasing deposition temperature. No hydride bonds are detected by Fourier transform infrared spectroscopy measurements. The chemical order of the deposited SiC films improves with increasing deposition temperature.

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Section: Introductionmentioning

confidence: 99%

Transition between amorphous and crystalline phases of SiC deposited on Si substrate using H3SiCH3

Wang

Dimitrijev

Han

et al. 2009

Journal of Crystal Growth

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“…SiCN coatings are desired for many industrial applications such as microelectromechanical systems (MEMS), turbine engine blades and wear‐resistant coatings for the automotive industry to enhance the life and performance of the components. They also find applications in MEMS device fabrication in the form of field emission displays, catalyst‐support high‐temperature semiconducting devices, metal and polymer matrix composites and high‐temperature applications 9, 10. Both crystalline and amorphous or nanostructured SiCN compounds have been prepared.…”

Section: Introductionmentioning

confidence: 99%

“…They also find applications in MEMS device fabrication in the form of field emission displays, catalyst-support high-temperature semiconducting devices, metal and polymer matrix composites and high-temperature applications. [9,10] Both crystalline and amorphous or nanostructured SiCN compounds have been prepared. Thin films of SiCN have been prepared by plasma and ion-assisted depositions.…”

Section: Introductionmentioning

confidence: 99%

Raman studies on nanocomposite silicon carbonitride thin film deposited by r.f. magnetron sputtering at different substrate temperatures

Bhattacharyya

Mishra

2010

J Raman Spectroscopy

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“…SiC besitzt zwar gu Ènstige Reibungskoeffizienten, das ermittelte Verschleiûvolumen ist jedoch recht hoch. SiN x zeigt einen mit 0,7 recht hohen Reibungskoeffizienten, jedoch ist das [16]. Bei der Verwendung von kovalent gebundenem Schichtmaterial ist die Schichthaftung auf dem meist metallischen Substrat ein wesentliches Problem, das auch von Kohlenstoff-und BN-Schichten bekannt ist.…”

Section: Diskussion Und Ausblickunclassified