Ion assisted growth of B4C diffusion barrier layers in Mo/Si multilayered structures

Bruijn, S.; Kruijs, R. W. E. van de; Yakshin, Andrey; Bijkerk, Frederik

doi:10.1063/1.3693992

Cited by 7 publications

(3 citation statements)

References 24 publications

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“…Such interlayers also increase thermal stability as was demonstrated in previous studies [31][32][33][34][35]. We note that there are other ways to increase thermal stability.…”

Section: Introductionsupporting

confidence: 83%

Thermal stability studies of short period Sc/Cr and Sc/B₄C/Cr multilayers

et al. 2014

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The stability of short period Sc/Cr and Sc/B₄C/Cr multilayers was investigated over a large temperature range. The aim was to find a stable reflective coating for an off-axis parabola for focusing x rays from a soft x-ray free-electron laser. Normal incidence reflectivity, surface roughness, and intrinsic stress were investigated as a function of annealing temperature and two samples were also studied with a high-resolution transmission electron microscope (TEM), a scanning TEM, and through electron energy loss spectroscopy (EELS). Interface-engineered Sc/B₄C/Cr multilayers showed increased thermal stability and higher reflectivity as compared to pure Sc/Cr multilayers.

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“…Such interlayers also increase thermal stability as was demonstrated in previous studies [31][32][33][34][35]. We note that there are other ways to increase thermal stability.…”

Section: Introductionsupporting

confidence: 83%

Thermal stability studies of short period Sc/Cr and Sc/B₄C/Cr multilayers

et al. 2014

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“…A 10 % increase in B 4 C barrier layer density has been shown to reduce diffusion rates by over one order of magnitude. 16 Diffusion barriers may strongly reduce diffusion rates across interfaces, but can never fully eliminate MoSi 2 formation since the latter process remains energetically favorable as long as pure Mo and Si remain present. Another method to reduce interface formation actually aims at removing the diffusing Mo and Si species by using stable compounds of Mo and Si as base materials for the multilayer.…”

Section: Multilayers With Enhanced Thermal Stabilitymentioning

confidence: 99%

Interface diffusion kinetics and lifetime scaling in multilayer Bragg optics

et al. 2011

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The internal structure of Mo/Si multilayers is investigated during and after thermal annealing. Multilayer period compaction is shown to result from diffusion induced MoSi 2 interlayer growth, reducing optical contrast and changing the reflected wavelength. We focus on early-stage interface growth observed at relatively low temperatures (100 °C -300 °C), determining diffusion constants from parabolic interface growth laws. Diffusion constants obey Arrhenius-type behavior, enabling temperature scaling laws. Using the methods developed, we compare results on Mo/Si based multilayers designed for enhanced thermal stability and discuss their relevant diffusion behavior. Arrhenius-type behavior can be observed in all multilayers studied here, and demonstrates reduction of diffusion rates over several orders of magnitude. The method described here is of general interest for any multilayer application that is subjected to enhanced thermal loads and demonstrates the enormous technology gain that this type of optics has experienced the last decade.

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“…10,11 At such thicknesses, the interface imperfections like the interface roughness and the intermixing, become very significant and affect the performance of multilayer devices due to the loss of specular reflectivity. 12,13 Moreover, during the growth of the multilayer, A/B and B/A interfaces are not symmetric due to the inherent difference in the surface free energy (c) of the elements. 14 Hence, improvement of the interface roughness and intermixing is a very important issue in multilayer based devices.…”

Section: Introductionmentioning

confidence: 99%

Study of surfactant mediated growth of Ni/V superlattices

Amir

Gupta

Potdar

et al. 2013

Journal of Applied Physics

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The Ni/V multilayers are useful as soft x-ray mirrors, polarizers, and phase retarders. For these applications, it is necessary that the interfaces roughness and interdiffusion must be as small as possible. The V-on-Ni and Ni-on-V interfaces are asymmetric due to the difference in the surface free energy of Ni and V. In this work, we report Ag surfactant mediated growth of Ni/V superlattices prepared using ion beam sputter deposition technique. These superlattices were studied using x-ray and neutron scattering techniques. It was found that when added in an optimum amount, Ag surfactant results in reduced interface roughness and interdiffusion across the interfaces. Obtained results can be understood with the surfactant floating-off mechanism leading to a balance in the surface free energy of Ni and V. V

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Ion assisted growth of B4C diffusion barrier layers in Mo/Si multilayered structures

Cited by 7 publications

References 24 publications

Thermal stability studies of short period Sc/Cr and Sc/B₄C/Cr multilayers

Thermal stability studies of short period Sc/Cr and Sc/B₄C/Cr multilayers

Interface diffusion kinetics and lifetime scaling in multilayer Bragg optics

Study of surfactant mediated growth of Ni/V superlattices

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Ion assisted growth of B4C diffusion barrier layers in Mo/Si multilayered structures

Cited by 7 publications

References 24 publications

Thermal stability studies of short period Sc/Cr and Sc/B4C/Cr multilayers

Thermal stability studies of short period Sc/Cr and Sc/B4C/Cr multilayers

Interface diffusion kinetics and lifetime scaling in multilayer Bragg optics

Study of surfactant mediated growth of Ni/V superlattices

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Thermal stability studies of short period Sc/Cr and Sc/B₄C/Cr multilayers

Thermal stability studies of short period Sc/Cr and Sc/B₄C/Cr multilayers