Ion-atom inelastic scattering cross sections and energy loss in the plane-wave Born approximation

McGuire, E. J.

doi:10.1103/physreva.56.488

Cited by 9 publications

(3 citation statements)

References 10 publications

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“…Many different physical processes contribute to the electronic stopping: ionization of the target atoms, excitation of electrons into the conduction band, collective electronic excitations such as plasmons, etc. [89][90][91][92][93][94][95][96][97][98][99][100][101][102] Electronic stopping dominates at high ion energies ͑see Fig. 2͒.…”

Section: A Production Of Defects In Bulk Targetsmentioning

confidence: 99%

Ion and electron irradiation-induced effects in nanostructured materials

Krasheninnikov¹,

Nordlund²

2010

Journal of Applied Physics

947

591

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A common misconception is that the irradiation of solids with energetic electrons and ions has exclusively detrimental effects on the properties of target materials. In addition to the well-known cases of doping of bulk semiconductors and ion beam nitriding of steels, recent experiments show that irradiation can also have beneficial effects on nanostructured systems. Electron or ion beams may serve as tools to synthesize nanoclusters and nanowires, change their morphology in a controllable manner, and tailor their mechanical, electronic, and even magnetic properties. Harnessing irradiation as a tool for modifying material properties at the nanoscale requires having the full microscopic picture of defect production and annealing in nanotargets. In this article, we review recent progress in the understanding of effects of irradiation on various zero-dimensional and one-dimensional nanoscale systems, such as semiconductor and metal nanoclusters and nanowires, nanotubes, and fullerenes. We also consider the two-dimensional nanosystem graphene due to its similarity with carbon nanotubes. We dwell on both theoretical and experimental results and discuss at length not only the physics behind irradiation effects in nanostructures but also the technical applicability of irradiation for the engineering of nanosystems.

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Section: A Production Of Defects In Bulk Targetsmentioning

confidence: 99%

Ion and electron irradiation-induced effects in nanostructured materials

Krasheninnikov¹,

Nordlund²

2010

Journal of Applied Physics

947

591

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“…This leads to lots of possible inelastic transitions when the projectile collides with the target electrons, which include the excitation and ionization from the ground and excited states of the target electron as well as their reverse processes, as pointed out in our model [13,14]. However, more than 40 years ago McGuire did a series of work [5][6][7][8] to study the inelastic stopping in plasmas, especially for proton in Al plasmas in different charge states [8], where the target ion was assumed in the ground state. So it is necessary to see how different the results are according to the two different assumptions.…”

Section: Introductionmentioning

confidence: 93%

“…The study of inelastic processes is of significance to estimate the stopping power in partially ionized plasmas. Based on different physical pictures, so far there have been a lot of models [1][2][3][4][5][6][7][8][9][10][11][12][13][14] to calculate the inelastic stopping (stopping power due to inelastic processes). In our previous work [14] we made a comparison of some of these models for the stopping in Al plasmas which also includes the contribution from other mechanisms.…”

Section: Introductionmentioning

confidence: 99%

Inelastic stopping for deuterons in warm Al plasmas

He¹,

Liu²,

Liu³

et al. 2015

Nucl. Fusion

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The inelastic stopping is studied for deuterons in the Al plasmas with a fixed density 0.02 g cm −3 at 7 different temperatures from 2.7 to 64 eV within the projectile energy range from 100 keV u −1 to 10 MeV u −1 from our model (He and Wang 2014 Phys. Plasmas 21 063111). All the results are compared in detail with those from the isolated ion model where all the bound electrons are assumed in the ground state and the target ions are in almost the same charge states as those in the plasmas. The relativistic plane wave Born approximation is tested by much improved methods and found to be able to describe well the inelastic processes in the plasmas. The relevant result of the inelastic stopping is found to reflect the joint effect of the transition probability, electron occupation number and transition energy. It is found that the transitions of the deeply bound states play a dominant role to the inelastic stopping in the two models. The results due to all the excitation and de-excitation and those due to all the ionization and three body recombination in the plasmas are usually lower and higher than those for the corresponding isolated ions, respectively. It is demonstrated that models with target ions in the ground state could agree well with experiments in plasmas at a high enough projectile energy provided by a proper choice of the charge state of the target ion. The obvious difference between our model and Casas et al's model (Casas et al 2013 Phys. Rev. E 88 033102) is seen for the stopping with the projectile energy around 100 keV u −1 due to the different physical picture underlying them, which is helpful to probe which model proves more reliable in future experiments.

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Ion beam engineering of nanostructured materials for superior performance in supercapacitor applications: Recent progress and future perspectives

Maharana,

Chatterjee

2025

Journal of Energy Storage

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Ion-atom inelastic scattering cross sections and energy loss in the plane-wave Born approximation

Cited by 9 publications

References 10 publications

Ion and electron irradiation-induced effects in nanostructured materials

Ion and electron irradiation-induced effects in nanostructured materials

Inelastic stopping for deuterons in warm Al plasmas

Ion beam engineering of nanostructured materials for superior performance in supercapacitor applications: Recent progress and future perspectives

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