Ion Beam Alignment Procedures using a Faraday Cup or a Silicon Dioxide Film on Silicon Substrate with Auger Electron Microscope

Urushihara, Nobuaki; Sanada, N.; Paul, Deepanjan; Suzuki, Mineharu

doi:10.1384/jsa.14.124

Cited by 2 publications

(2 citation statements)

References 2 publications

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“…In the regard of the industrial application of SiO 2 , SiO 2 is an important material for the quantitative surface chemical analysis as well as the gate oxide in semiconductor devices. The SiO 2 film has been widely used as reference materials for sputter depth profiling in order to align the ion beam [14], to estimate the etching rate, and to calibrate the sputtered depth. From a practical point of view, the determination of the experimental conditions for the AES measurement of SiO 2 to avoid or reduce the electron-induced damage as much as possible is required.…”

Section: Introductionmentioning

confidence: 99%

Effects of Carbon Contaminations on Electron-Induced Damage of SiO<sub>2</sub> Film Surface at Different Electron Primary Energies

Nagatomi

Nakamura

Takai

et al. 2011

JSA

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Dependence of the electron-induced damage of the clean and carbon-contaminated SiO 2 film surfaces during the Auger electron spectroscopy measurement was investigated under irradiation of electrons at different primary energies. The variation in the intensity of the Si-LVV elemental peak with the increase in the electron dose was measured and analyzed within the scheme of the two-step decomposition model [J. Surf. Sci. Soc. Jpn. 25, 212 (2004) (in Japanese)]. The results clearly revealed that the rate of the decomposition of SiO 2 induced by the electron irradiation is decreased by a small amount of carbon contaminations of ~0.03 nm thickness on the SiO 2 surface. The effects of carbon contaminations on the reduction in the electron-induced degradation of SiO 2 is significant for the low-primary energy of electrons of 3 keV, and no effects were confirmed at the primary energy of 15 keV. These findings suggest that the primary energy dependence is attributed to the fact that interactions between primary electrons and atoms in the near surface region is much significant when primary electrons with the lower primary energy are irradiated.

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Section: Introductionmentioning

confidence: 99%

Effects of Carbon Contaminations on Electron-Induced Damage of SiO<sub>2</sub> Film Surface at Different Electron Primary Energies

Nagatomi

Nakamura

Takai

et al. 2011

JSA

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“…SiO 2 is an industrially important material as not only the gate oxide in semiconductor devices but also the reference material for the quantitative surface chemical analysis. A SiO 2 film on the Si substrate has been widely used as reference materials for sputter depth profiling in order to align the ion beam [14], to estimate the etching rate, and to calibrate the sputtered depth. In addition, SiO 2 films can be used as a reference for calibrating the electron-induced damage of samples.…”

Section: Introductionmentioning

confidence: 99%

Approach to Quantitative Evaluation of Electron-Induced Degradation of SiO2 Film Surface with Different Amounts of Carbon Contaminations

Nagatomi

Nakamura

Takai

et al. 2011

e-J. Surf. Sci. Nanotechnol.

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Effects of carbon contaminations existing on the SiO2 film surface on the electron-induced damage of SiO2 were investigated. Carbon contaminations, the amount of which is only ∼0.05 nm thickness, are found to act as a protective layer for the degradation. The changes in the elemental and oxide Si-LVV Auger peak intensities due to the electron-induced damage are confirmed to be reasonably described by two-and one-step decomposition models, respectively. The critical dose, at which a certain amount of the damage occurs, is larger for the higher beam current density of primary electrons and the larger initial amount of carbon contaminations. The present results confirmed that the dependences of the degradation on the amount of carbon contaminations and the beam current density are attributed to the diffusion of oxygen and recombination of broken bonds between Si and oxygen, which are enhanced by the increase in the local temperature due to the electron irradiation. Consequently, the small amount of carbon contaminations was found to strongly affect results of the quantitative Auger electron spectroscopy analysis of metal oxides when the electron-induced damage of samples occurs. The present analytical approach, where the critical doses are measured for the SiO2 surfaces with different amounts of carbon contaminations, is effective to evaluating and estimating the electron-induced damage.

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Ion Beam Alignment Procedures using a Faraday Cup or a Silicon Dioxide Film on Silicon Substrate with Auger Electron Microscope

Cited by 2 publications

References 2 publications

Effects of Carbon Contaminations on Electron-Induced Damage of SiO<sub>2</sub> Film Surface at Different Electron Primary Energies

Effects of Carbon Contaminations on Electron-Induced Damage of SiO<sub>2</sub> Film Surface at Different Electron Primary Energies

Approach to Quantitative Evaluation of Electron-Induced Degradation of SiO2 Film Surface with Different Amounts of Carbon Contaminations

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