Ion beam analysis of CdTe nuclear detector contact grown by electroless process

Roumié, M.; Zahraman, K.; Nsouli, B.; Lmai, F.; Zaiour, A.; Hage‐Ali, M.; Ayoub, M.; Sowińska, M.

doi:10.1016/j.nimb.2005.06.135

Cited by 14 publications

(13 citation statements)

References 3 publications

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“…6) by all the investigated samples and are confirmed by the good agreement observed among the results from multiple samples with the same treatment. A similar situation has been reported in refs [14,15,16,17]. We looked for a correlation between the spectroscopic performance of the detectors and the treatments (not annealed or annealed) Findings: � In annealed crystals Te/Cd ratio is largely perturbed, however these samples show much better spectroscopic performance � The Te excess at the surface appears to promote the quality of the detectors These conclusions are well supported by the total depth of the defected zones (total surface layer RBS in the table) and by the number of layers required to reproduce the different Te/Cd concentration ratios in the sub-surface regions …”

Section: Discussionsupporting

confidence: 91%

Characterization of X- and Gamma- ray CdTe radiation detectors

Raulo¹,

Sowińska²,

Hennard³

et al. 2011

2011 IEEE Nuclear Science Symposium Conference Record

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CdTe crystals grown by the Traveling Heater Method (THM) often show a pronounced non-uniformity along the ingots due to the thermal irregularities, the Te-excess growth conditions resulting from the retrograde slope of the solidus line of the phase diagram, and to the introduced impurities. In addition, structural defects can be present that affect the electrical and optical properties of the crystals. X-ray and alpha particle spectroscopy measurements have been performed on differently prepared CdTe samples (as grown or annealed, different surface treatments, etc.) with Pt electrodes deposited by electroless technique in order to extract the typical figures of merit of the material and the detectors. Moreover, Rutherford Backscattering Spectrometry (RBS) using 8 MeV ' Li+++ ions and X-Ray Fluorescence (XRF) nsing a Pd anode X-Ray generator were performed to characterize the crystal surface as well as the semiconductor-electrode interface.In addition, contactless resistivity and mutau product mapping technique, infrared microscopy imaging and electrical and spectroscopy measurements have been used for material characterisation.The aim of this work is to determine in a routine way the best suited method to fabricate high-quality X-and Gamma-ray detectors to be used both as large size simple detectors and as elements of imaging systems in medical or indnstrial applications as well as to understand and improve the structure of the material-electrode interface. The thickness, the stoichiometry and the concentration profiles of platinum, cadmium and tellurium present at the surface layers were determined. The distribution of Cd deficiency at the interface layers was profiled using simulations and showed complex profiles in the samples, which can greatly affect the electrical quality of the detectors. and perillo@na.infn.it).

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Section: Discussionsupporting

confidence: 91%

Characterization of X- and Gamma- ray CdTe radiation detectors

Raulo¹,

Sowińska²,

Hennard³

et al. 2011

2011 IEEE Nuclear Science Symposium Conference Record

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“…RBS technique is one of the best non-destructive methods to determine the thicknesses of the different layers and elemental depth distribution that is widely used in studies of interfaces and diffusion profiles on films [14,15]. Fig.…”

Section: Rutherford Backscattering Spectrometrymentioning

confidence: 99%

Deposition of nanometric double layers Ru/Au, Ru/Pd, and Pd/Au onto CdZnTe by the electroless method

Zheng

Dierre

Corregidor

et al. 2012

Journal of Crystal Growth

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“…A Co (14,22, 122 and 136 keV) source was used in order to test and characterize the detectors. A 100 and 200 V bias voltage, for 5 5 2 mm and 2 2 2 mm detectors, respectively, was applied.…”

Section: Spectroscopic Measurementsmentioning

confidence: 99%

Pt-CdTe Detectors Spectroscopic Performances and RBS and XRF Interface Composition Analysis

Raulo

Sowińska

Hennard

et al. 2012

IEEE Trans. Nucl. Sci.

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X-and Gamma-Ray spectroscopy measurements have been performed on differently prepared CdTe samples (as-grown or annealed, different surface treatments, etc.) with Pt electrodes deposited by electroless technique in order to extract the typical figures of merit of the material and the detectors. Moreover, Rutherford Backscattering Spectrometry (RBS) using 8 MeV Li ions and X-Ray Fluorescence (XRF) using a Pd-anode X-Ray generator were performed to characterize the crystal surface as well as the semiconductor-electrode interface. The thickness, the stoichiometry and the concentration profiles of platinum, cadmium and tellurium present at the surface layers were determined. The distribution of Cd deficiency at the interface layers was profiled using simulations and showed complex profiles in the samples, that can greatly affect the electrical quality of the detectors. In addition, resistivity and mu-tau product mapping and electrical measurements have been performed for material characterization. The aim of this work is to understand and improve the structure of the material-electrode interface; in particular, to understand the effect of the annealing process on the fabrication of the contacts and, at the end, on the performances of the detectors. For this reason a large number of detectors have been produced applying various chemical surface treatments on as-grown and annealed material, in order to determine the best routine way to fabricate high-quality X-and Gamma-ray detectors to be used both as large size planar detectors and as elements of imaging systems in medical or industrial applications.

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Ion beam analysis of CdTe nuclear detector contact grown by electroless process

Cited by 14 publications

References 3 publications

Characterization of X- and Gamma- ray CdTe radiation detectors

Characterization of X- and Gamma- ray CdTe radiation detectors

Deposition of nanometric double layers Ru/Au, Ru/Pd, and Pd/Au onto CdZnTe by the electroless method

Pt-CdTe Detectors Spectroscopic Performances and RBS and XRF Interface Composition Analysis

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