Ion beam analysis of Heusler alloy Fe₃Si epitaxially grown on Si(111)

Abstract

We have investigated atomic ordering of Heusler alloy Fe3Si(111) epitaxially grown on Si(111) by using ion beam analysis. The total atomic displacement along Si<111> directions was deduced from the minimum yield χmin and the critical angle Ψ1/2 for channeling. The total displacement consists of both one‐dimensional thermal vibrations computed by the Debye theory and static displacements due to imperfections, lattice mismatch, thermal expansion etc. The atomic displacement increased as the annealing temperature increased from 373 to 573 K. We found that this static displacement came from a difference in thermal expansion between the Fe3Si film and Si substrates at the anneal temperature and was quenched into room temperature as a remnant displacement. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Approach to form planar structures based on epitaxial Fe1−xSix films grown on Si(111)

“…The minimum yield of backscattered He ions χmin of 19.5% was obtained for Fe0.75Si0.25 alloy film from the ratio of the amplitude of Fe signal for the channeling spectrum to that for the random spectrum. The value obtained is comparable to the χmin reported earlier by Y. Maeda et al [23] and approximately two times lower than the value achieved in work [24], which indicates high crystal quality of the film. Thus, comparison of the data on the chemical composition of the Fe1 − xSix alloy films obtained by both XRD and RBS methods indicates their good agreement (Fig.…”

“…Thin Solid Films 642 (2017) [20][21][22][23][24] (111) ||Si(111) and shows no twinning. An appearance of a double peak on φ-scan for reflections {224} from the substrate is due to the splitting of Kα1,2.…”

Iron silicides formation on Si (100) and (111) surfaces through theoretical modeling of sputtering and annealing

“…5g, h). It was previously shown in the study of Fe 3 Si on Si (111) [63] that the temperature dependence of static displacement for Fe atoms is bigger than for Si atoms, which agrees well with our data. A comparison of Fig.…”

Effect of the Local Environment on the Magnetic Properties of Mn3Si: Hybrid Ab Initio and Model Study

“…These materials can be grown epitaxially on many different semiconductor and insulator substrates, and its degrees of chemical and structural order can be changed by the thin film growth techniques. Their magnetic and electronic properties depend on the crystal structure and composition and vary from ferromagnetic metal (Fe 3 Si) to paramagnetic semiconductor (β‐FeSi 2 ).…”

“…These materials can be grown epitaxially on many different semiconductor and insulator substrates, [1][2][3][4] and its degrees of chemical and structural order can be changed by the thin film growth techniques. Their magnetic and electronic properties depend on the crystal structure and composition and vary from ferromagnetic metal (Fe 3 Si [5][6][7] ) to paramagnetic semiconductor (β-FeSi 2 [8] ). One of the most exciting compounds from the transition metal silicides family is the Heusler compounds of T 3 Si with the DO 3 -type cubic crystal structure.…”