Ion beam analysis of nitrogen

Bethge, Κ.

doi:10.1016/0168-583x(92)96148-r

Cited by 36 publications

(8 citation statements)

References 73 publications

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“…Fig. 2a shows the average angular position of 1708 (solid angle: 130 msr) that reduces to a minimum the effect of the surface roughness and improves the cross-section [14,15]. A Mylar foil (with a thickness of 26 mm) was mounted on the collimator to stop backscattered deuterons (Fig.…”

Section: Nuclear Analysismentioning

confidence: 99%

“…The concentration of oxygen and nitrogen is deduced from the energy spectrum of the emitted protons. The normalization and the absolute quantification of these analyses need measurement of the number of incident deuterons [14,15]. The same element may produce more than one peak when several nuclear energy levels are involved (Fig.…”

Section: Nuclear Analysismentioning

confidence: 99%

“…The intensity of a peak is directly related to the concentration. Quantification of the analyses takes into account the stopping power properties (dE/dx) of the targets and cross-sections of the nuclear reactions involved [14,15].…”

Section: Nuclear Analysismentioning

confidence: 99%

“…To investigate the composition and distribution of the chemical elements, a 2 mm Â 2 mm deuteron micro beam was used with a range of more than 1 m [13][14][15]. This micro beam was delivered by a Van de Graff particle accelerator running at 920 keV.…”

Section: Nuclear Analysismentioning

confidence: 99%

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The influence of laser power and repetition rate on oxygen and nitrogen insertion into titanium using pulsed Nd:YAG laser irradiation

Lavisse

Jouvard

Gallien

et al. 2007

Applied Surface Science

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Section: Nuclear Analysismentioning

confidence: 99%

Section: Nuclear Analysismentioning

confidence: 99%

Section: Nuclear Analysismentioning

confidence: 99%

Section: Nuclear Analysismentioning

confidence: 99%

See 2 more Smart Citations

The influence of laser power and repetition rate on oxygen and nitrogen insertion into titanium using pulsed Nd:YAG laser irradiation

Lavisse

Jouvard

Gallien

et al. 2007

Applied Surface Science

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“…The cross section in the narrow resonance (F = 120 eV) is approx, four orders of magnitude higher than the cross section in the adjacent non-resonant part of the excitation function [13]. A CVD silicon nitride sample served as ~SN standard [14].…”

Section: Resonant Nuclear Reaction Analysismentioning

confidence: 99%

Nitrogen depth distribution, interface and structure analysis of SiNx layers produced by low-energy ion implantation

et al. 1997

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Abstract. Thin silicon nitride (SiNx) layers with the stoichiometric N/Si ratio of 1.33 in the maximum of the concentration depth distributions of nitrogen were produced by implanting 10 keV 15N2 in ~ 100) silicon at room temperature under high vacuum conditions. The depth distribution of the implanted isotope was measured by resonance nuclear reaction analysis (NRA), whereas the layer structure of the implanted region and the geometrical thickness of the layers were characterised by high resolution transmission electron microscopy (TEM). SiN x layers with a thickness of about 30 nm were determined by NRA. Channeling Rutherford backscattering spectrometry was used to determine the disorder in the silicon substrate. Sharp interfaces of a few nanometers between the highly disordered implanted region and the crystalline structure of the substrate thickness were observed by TEM. The high thermal stability of SiN x layers with N/Si ratios from under to over stoichiometric could be shown by electron beam rapid thermal annealing (1100 ~ for 15 s, ramping up and down 5 ~ and NRA.Key words: ion implantation, silicon nitride layers, TEM analysis, resonant nuclear reaction analysis, nitrogen depth profile.Thin silicon nitride (SiNx) layers (e.g., prepared by chemical vapour deposition) are mainly used in microelectronic devices [1]. These layers serve as dielectric insulators and diffusion barriers. It is known that their properties depend on the preparation process [2,3], which results in variations of the N to Si ratio and impurities like oxygen [4]. Ion implantation offers a method to produce impurity-free SiN~ layers with different N to Si ratios and layer thicknesses. The interface to the crystalline Si and the chemical bond structure [5,6,7] have to be investigated. * To whom correspondence should be addressed 15NI+ 1~2 ions with 10keV (fluence F=l.5-1017 ions/cm 2, ion flux j = 10 ~tA/cm 2) were implanted into the polished side of HF etch-cleaned (100) Si wafers at room temperature to form ultra thin SiN x layers with the stoichiometric N/Si ratio of 1.33 in the maximum of the nitrogen depth distribution [8] close to the surface of the samples. Results of SiN x layers with under and over stoichiometric N/Si ratios and a comparison between atomic and molecular nitrogen ion implantations are presented elsewhere [9]. The implanted specimens were subsequently processed under high vacuum conditions by electron beam rapid thermal annealing (EB-RTA) at 1100 ~ for 15 s (ramping up and down at 5 ~ for an electron energy of 20 keV [10]. 15 N was implanted instead of 14N, so that nuclear reaction analysis with a resonant reaction (NRA) can be used to analyse the nitrogen depth distributions. Hydrogen was the only impurity detected, and was at a concentration of 1.5 at.%. Analysis of the chemical bond structure by , XPS (x-ray photoelectron spectroscopy) [8] and EXAFS (extended x-ray absorption fine-structure) [-5] showed the existence of Si3N 4 bonds in both as-implanted as well as subsequently annealed SiNx layers.It is known...

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