Ion-Beam Induced Current in High-Resistance Materials

Abstract

The peculiarities of electric current in high-resistance materials, such as semiconductors or semimetals, irradiated by ion beams are considered. It is shown that after ion-beam irradiation an unusual electric current may arise directed against the applied voltage. Such a negative current is a transient effect appearing at the initial stage of the process. The possibility of using this effect for studying the characteristics of irradiated materials is discussed. A new method for defining the mean projected range of ions is suggested.

Numerical Modeling of Transport Processes in Semiconductors

“…This unusual transient effect of negative current is interesting by itself although there might be some useful applications suggested. For example, it can be used for measuring physical characteristics of semiconductor materials or for constructing electronic controlling devices [3].…”