Ion beam-induced defects in ZnO: A radiation hard metal oxide

Pal, Srimanta; Mondal, A.; Sarkar, A.; Chattopadhyay, Sanatan; Jana, Debnarayan

doi:10.1016/b978-0-323-85588-4.00008-8

Cited by 2 publications

(1 citation statement)

References 212 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the as-implanted stage, the ZnO layer is strongly disordered but not fully amorphous. ZnO is known to be very resistant to ion irradiation [45,46]. High fluence ion implantation with middle-range energies mainly causes some atom displacement and formation of various disorders in the crystal, like basal dislocation loops within the dopant distribution and prismatic loops located beyond the ion range [46].…”

Section: Raman Spectroscopymentioning

confidence: 99%

P-Type ZnO Films Made by Atomic Layer Deposition and Ion Implantation

Zhang,

Rebohle,

Ganss

et al. 2024

Nanomaterials

View full text Add to dashboard Cite

Zinc oxide (ZnO) is a wide bandgap semiconductor that holds significant potential for various applications. However, most of the native point defects in ZnO like Zn interstitials typically cause an n-type conductivity. Consequently, achieving p-type doping in ZnO is challenging but crucial for comprehensive applications in the field of optoelectronics. In this work, we investigated the electrical and optical properties of ex situ doped p-type ZnO films. The p-type conductivity has been realized by ion implantation of group V elements followed by rapid thermal annealing (RTA) for 60 s or flash lamp annealing (FLA) on the millisecond time scale in nitrogen or oxygen ambience. The phosphorus (P)-doped ZnO films exhibit stable p-type doping with a hole concentration in the range of 1014 to 1018 cm−3, while antimony (Sb) implantation produces only n-type layers independently of the annealing procedure. Microstructural studies of Sb-doped ZnO show the formation of metallic clusters after ms range annealing and SbZn-oxides after RTA.

show abstract

Section: Raman Spectroscopymentioning

confidence: 99%