Ion beam induced recrystallization of amorphous silicon: A molecular dynamics study

Marqués, Luis A.; Caturla, M.-J.; Rubia, T. Dı́az de la; Gilmer, George H.

doi:10.1063/1.363690

Cited by 52 publications

(18 citation statements)

References 45 publications

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“…Different values were deduced from Raman data for the small and large grains (Figure 3(b)). All these values are quite consistent, but seem to be small as compared to the activation energy found for recrystallization of amorphous silicon for instance, that is ranging from~1 to 5 eV in thermal annealing experiments [52−55] and 1.7 eV in MD simulations [56]. Large activation energies (ΔE~4-5 eV) were also obtained for the crystallization kinetics of a-SiC films on Si substrates followed by FTIR spectroscopy [57][58] or XRD [59]: a strong effect of the substrate on ΔE was observed [59].…”

Section: Damage Recovery and Thermally Induced Densificationsupporting

confidence: 53%

Recrystallization of hexagonal silicon carbide after gold ion irradiation and thermal annealing

Miro

Costantini

Huguet-Garcia

et al. 2014

Philosophical Magazine

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International audienceSilicon carbide (SiC) single crystals with the 6H polytype structure were irradiated with 4.0-MeV Au ions at room temperature (RT) for increasing fluences ranging from 1 x 10(12) to 2 x 10(15)cm(-2), corresponding to irradiation doses from ~0.03 to 5.3 displacements per atom (dpa). The damage build-up was studied by micro-Raman spectroscopy that shows a progressive amorphization by the decrease and broadening of 6H-SiC lattice phonon peaks and the related growth of bands assigned to Si-Si and C-C homonuclear bonds. A saturation of the lattice damage fraction deduced from Raman spectra is found for ~0.8 dpa (i.e. ion fluence of 3 x 10(14)cm(-2)). This process is accompanied by an increase and saturation of the out-of-plane expansion (also for ~0.8 dpa), deduced from the step height at the sample surface, as measured by phase-shift interferometry. Isochronal thermal annealing experiments were then performed on partially amorphous (from 30 to 90%) and fully amorphous samples for temperatures from 200 degrees C up to 1500 degrees C under vacuum. Damage recovery and densification take place at the same annealing stage with an onset temperature of ~200 degrees C. Almost complete 6H polytype regrowth is found for partially amorphous samples (for doses lower than 0.8 dpa) at 1000 degrees C, whereas a residual damage and swelling remain for larger doses. In the latter case, these unrelaxed internal stresses give rise to an exfoliation process for higher annealing temperatures

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Section: Damage Recovery and Thermally Induced Densificationsupporting

confidence: 53%

Recrystallization of hexagonal silicon carbide after gold ion irradiation and thermal annealing

Miro

Costantini

Huguet-Garcia

et al. 2014

Philosophical Magazine

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“…These views are consistent with experimental results. [18][19][20][21] Cluster impact on the surface has been studied using molecular dynamics by many researchers, 9,[22][23][24] including fullerene C 60 clusters implanted on a graphite surface, 9 silicon cluster soft landing on a Si͑100͒ surface, 24 and Ar cluster bombardment on a Si͑100͒. 22,23 Gilmer and Roland 24 performed a three-dimensional simulation of the impact of 50 silicon clusters with energy 0.5 keV onto a Si ͑100͒ surface to investigate the film deposition process.…”

Section: Introductionmentioning

confidence: 99%

Mechanisms of cluster implantation in silicon: A molecular-dynamics study

1998

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Employing molecular dynamics, we have simulated collisions of various sizes of 5.7-keV silicon clusters with a silicon surface. At this energy, the simulation provides an atomistic description of the evolution of the multiple scattering process of atoms in the cluster as well as the substrate where atoms interact with each other by covalent forces. The change from the collision cascade that is characteristic in the single-ion case to the simultaneous collision process that leads to the collective motion of particles, such as macroscopic vibration of the surface and shock waves, is found by increasing the number of the atoms in the cluster. With an increase in cluster size, the impurity profile and the damaged region for the cluster ion implantation is also found to be shallower. In contrast to single-ion implantation, cluster implantation may not induce defects in deep regions, making it suitable for device design. The channeling effect is found to be mainly suppressed by the lowfrequency macroscopic vibrations of the surface rather than by the amorphization of the surface caused by the impact.

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“…To identify damage zones we used a method based on the time average of atom coordinates [8]. The time average is performed once the energy carried by the implanted ions is dissipated throughout the cell and thermalization has been reached.…”

Section: Methodsmentioning

confidence: 99%

Molecular implants and cold implants: Two new strategies for junction formation of future Si devices

Santos

Marqués

López

et al. 2011

Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

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In order to fulfill the stringent requirements for ultrashallow junction formation and proper defect removal needed for future Si devices, molecular and cold implants have arisen as new technological strategies for dopant incorporation. In this work we have used different atomistic simulation techniques within a multiscale scheme to study the phenomena governing the damage generation in these types of implants, and to develop models that can help to optimize the fabrication of future Si devices.

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Ion beam induced recrystallization of amorphous silicon: A molecular dynamics study

Cited by 52 publications

References 45 publications

Recrystallization of hexagonal silicon carbide after gold ion irradiation and thermal annealing

Recrystallization of hexagonal silicon carbide after gold ion irradiation and thermal annealing

Mechanisms of cluster implantation in silicon: A molecular-dynamics study

Molecular implants and cold implants: Two new strategies for junction formation of future Si devices

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