Ion beam mixing for processing of nanostructure materials

Ti–PS nanocomposites by plasma immersion ion implantation and deposition

“…On the other hand, as ion implantation and ion condensation repeat in every pulse in PIII&D process, the overall process would be similar to conventional IBM technique. IBM technique uses energetic ions to overcome the energy barrier at the interface of two different materials and to promote necessary chemical bonding formations for enhancing the interfacial adhesion [18,19]. It was initially considered in semiconductor and polymer metallization and recently in synthesizing metal-polymer nanocomposites, as demonstrated by Micolich et al [20].…”

Synthesis and Characterization of Erbium-Doped Silica Films Obtained by an Acid–Base-Catalyzed Sol–Gel Process

“…As a manifestation to this fact, we would like to bring the attention to the fact that the samples in this work were processed using sol-gel techniques, and that the transitions indicated on page 238 of reference [41] were for Er-doped aluminosilicate, while the ones in the work of Abedrabbo et al in references [42,43] were for ion beam mixing of Er, Si and O and for Er, Si, O and Ge, and all of them shared similar transitions. The ion beam mixing effort of this group started earlier without Er impurity centers as in references [44,45] and was consolidated with rare-earth inclusions. As a matter of fact, it is noteworthy to state that the transitions approximately corresponded to 1480 nm, 1500 nm, 1516 nm, 1535 nm and 1550 nm, and 1487 nm, 1511 nm, 1538 nm and 1551, respectively.…”

Enhancing Photoluminescence Spectra for Doped ZnO Using Neutron Irradiation

“…In this study, gadolinium and iron were used as the implanted material. As a matter of fact, in addition to directly implanting Gd into ZnO as in this work, members of this group have been keeping a track record of ion-beam mixing coated samples to modify the bandgap of semiconductors as in refs ( 30 ) and ( 31 ) and to create structures with optically active impurity centers as in refs ( 32 ) and ( 33 ) via energetically accelerated inert gases.…”