Ion beam modification of the structure and properties of hexagonal boron nitride: An infrared and X-ray diffraction study

Influence of Biofield Treatment on Physical, Structural and Spectral Properties of Boron Nitride

“…These four peaks in control and treated samples were attributed to the crystalline planes (002), (100), (102) and (004), which were in agreement with Joint Committee on Powder Diffraction Standards (JCPDS) card no. 34-0421 [35]. These peaks confirmed the hexagonal crystal structure of BN (h-BN) in all the control and treated samples.…”

“…The absorption peaks near 1340 cm -1 was attributed to E 1u in plane sp 2 bonded B-N stretching vibrations and the peak at 817 cm -1 was corresponded to A 1u out of plane B-N-B bonding vibrations in the control BN powder [35]. The treated sample T1 ( Figure 6) showed absorption peaks at around 923/cm which was attributed to the presence of e-BN along with h-BN in control and treated (T1 and T2) powder (Figures 6 and 7).…”

“…Furthermore, it is postulated that high energy milling may produce the porosity over spectrum of control sample showed an absorption peak at around 1340/ cm and interestingly two peaks were found at 1388/cm and 1356/cm in treated sample (T2). The emergence of new absorption peak at 1388/ cm could be due to the presence of r-BN [35]. It is postulated that the h-BN unit cell was distorted to form r-BN unit cell, which may be due to applied tensile stress during high energy milling through biofield treatment.…”

Three-dimensional foam-like hexagonal boron nitride nanomaterials via atmospheric pressure chemical vapor deposition

“…The peak at 37.6°is attributed to the aluminum sample holder as determined via an independent scan without the sample present, while the 43.8°peak is in close agreement with the (101) h-BN plane; however, with a diffraction signal near 44.5°, it is possible that could also be attributed to the sample holder. Moreover, peaks of 43.3, 74.4, 89.3 corresponding to cubic BN (c-BN) [23] and 41.6°and 53.0°for turbostratic BN (t-BN) [24] were not seen. Based on the EDS analysis, the samples demonstrated a consistently high level of purity with *99 at.% boron and nitrogen present and only trace amounts of chlorine and aluminum detected.…”

Raman studies on the effect of multiple-energy ion implantation on single-crystal hexagonal boron nitride

“…The absorption coefficient α of h-BN is in the order of 10 4 cm −1 for the 514 nm photon (4). According to the SRIM simulation programme, the chosen ion energies and fluence create a uniformly damaged layer from the surface to a maximum depth of ≈ 0.5 µm below the surface, contrary to a single energy implant of 150 keV (15) where the implanted layer is ≈ 0.4 µm below the surface, with the peak of the damage distribution centred about the same depth. It should be noted that beyond this implanted region the material is purely unimplanted h-BN.…”